skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1];  [1]
  1. Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1224580
Grant/Contract Number:  
FG02-10ER46774; SC0005038
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Name: Review of Scientific Instruments Journal Volume: 86 Journal Issue: 10; Journal ID: ISSN 0034-6748
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Adnane, L., Williams, N., Silva, H., and Gokirmak, A. High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating. United States: N. p., 2015. Web. doi:10.1063/1.4934577.
Adnane, L., Williams, N., Silva, H., & Gokirmak, A. High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating. United States. doi:10.1063/1.4934577.
Adnane, L., Williams, N., Silva, H., and Gokirmak, A. Wed . "High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating". United States. doi:10.1063/1.4934577.
@article{osti_1224580,
title = {High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating},
author = {Adnane, L. and Williams, N. and Silva, H. and Gokirmak, A.},
abstractNote = {},
doi = {10.1063/1.4934577},
journal = {Review of Scientific Instruments},
number = 10,
volume = 86,
place = {United States},
year = {2015},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4934577

Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

High-temperature thermoelectric transport at small scales: Thermal generation, transport and recombination of minority carriers
journal, September 2013

  • Bakan, Gokhan; Khan, Niaz; Silva, Helena
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02724

Apparatus for Seebeck coefficient and electrical resistivity measurements of bulk thermoelectric materials at high temperature
journal, February 2005

  • Zhou, Zhenhua; Uher, Ctirad
  • Review of Scientific Instruments, Vol. 76, Issue 2
  • DOI: 10.1063/1.1835631

A hot probe setup for the measurement of Seebeck coefficient of thin wires and thin films using integral method
journal, January 2008

  • Sarath Kumar, S. R.; Kasiviswanathan, S.
  • Review of Scientific Instruments, Vol. 79, Issue 2
  • DOI: 10.1063/1.2869039

Effects of a Magnetic Field on the Thermoelectric Properties of a Bismuth‐Antimony Alloy
journal, September 1962

  • Wolfe, R.; Smith, G. E.
  • Applied Physics Letters, Vol. 1, Issue 1
  • DOI: 10.1063/1.1777361

An apparatus for simultaneous measurement of electrical conductivity and thermopower of thin films in the temperature range of 300–750 K
journal, January 2011

  • Ravichandran, J.; Kardel, J. T.; Scullin, M. L.
  • Review of Scientific Instruments, Vol. 82, Issue 1
  • DOI: 10.1063/1.3529438

A high temperature apparatus for measurement of the Seebeck coefficient
journal, June 2011

  • Iwanaga, Shiho; Toberer, Eric S.; LaLonde, Aaron
  • Review of Scientific Instruments, Vol. 82, Issue 6
  • DOI: 10.1063/1.3601358

High temperature Seebeck coefficient metrology
journal, December 2010

  • Martin, J.; Tritt, T.; Uher, C.
  • Journal of Applied Physics, Vol. 108, Issue 12, Article No. 121101
  • DOI: 10.1063/1.3503505

Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
journal, July 1983

  • Masetti, G.; Severi, M.; Solmi, S.
  • IEEE Transactions on Electron Devices, Vol. 30, Issue 7
  • DOI: 10.1109/T-ED.1983.21207