skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films

Authors:
ORCiD logo [1];  [2];  [1];  [1];  [3];  [3];  [1];  [1]; ORCiD logo [1]
  1. Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269, USA
  2. Department of Electrical and Electronics Engineering, Eskisehir Osmangazi University, Eskisehir 26480, Turkey
  3. IBM Watson Research Center, Yorktown Heights, New York 10598, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1394681
Grant/Contract Number:  
SC005038
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 122 Journal Issue: 12; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Adnane, L., Dirisaglik, F., Cywar, A., Cil, K., Zhu, Y., Lam, C., Anwar, A. F. M., Gokirmak, A., and Silva, H. High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films. United States: N. p., 2017. Web. doi:10.1063/1.4996218.
Adnane, L., Dirisaglik, F., Cywar, A., Cil, K., Zhu, Y., Lam, C., Anwar, A. F. M., Gokirmak, A., & Silva, H. High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films. United States. doi:10.1063/1.4996218.
Adnane, L., Dirisaglik, F., Cywar, A., Cil, K., Zhu, Y., Lam, C., Anwar, A. F. M., Gokirmak, A., and Silva, H. Thu . "High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films". United States. doi:10.1063/1.4996218.
@article{osti_1394681,
title = {High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films},
author = {Adnane, L. and Dirisaglik, F. and Cywar, A. and Cil, K. and Zhu, Y. and Lam, C. and Anwar, A. F. M. and Gokirmak, A. and Silva, H.},
abstractNote = {},
doi = {10.1063/1.4996218},
journal = {Journal of Applied Physics},
number = 12,
volume = 122,
place = {United States},
year = {2017},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4996218

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Numerical Modeling of Thermoelectric Thomson Effect in Phase Change Memory Bridge Structures
journal, March 2014

  • Dirisaglik, Faruk; Bakan, Gokhan; Faraclas, Azer
  • International Journal of High Speed Electronics and Systems, Vol. 23, Issue 01n02
  • DOI: 10.1142/S0129156414500049

Electronic Transport in High-Resistivity Cerium Sulfide
journal, February 1964


The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties
journal, March 2004


Impact of thermoelectric phenomena on phase-change memory performance metrics and scaling
journal, April 2012


Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
journal, May 2000

  • Friedrich, I.; Weidenhof, V.; Njoroge, W.
  • Journal of Applied Physics, Vol. 87, Issue 9
  • DOI: 10.1063/1.373041

Ge 2 Sb 2 Te 5 /Sb superlattice-like thin film for high speed phase change memory application
journal, December 2015

  • Hu, Yifeng; Zou, Hua; Zhang, Jianhao
  • Applied Physics Letters, Vol. 107, Issue 26
  • DOI: 10.1063/1.4939149

Electrical Resistivity of Liquid $\hbox{Ge}_{2} \hbox{Sb}_{2}\hbox{Te}_{5}$ Based on Thin-Film and Nanoscale Device Measurements
journal, January 2013

  • Cil, Kadir; Dirisaglik, Faruk; Adnane, Lhacene
  • IEEE Transactions on Electron Devices, Vol. 60, Issue 1
  • DOI: 10.1109/TED.2012.2228273

Complex thermoelectric materials
journal, February 2008

  • Snyder, G. Jeffrey; Toberer, Eric S.
  • Nature Materials, Vol. 7, Issue 2, p. 105-114
  • DOI: 10.1038/nmat2090

Fermi-level pinning and charge neutrality level in nitrogen-doped Ge2Sb2Te5: Characterization and application in phase change memory devices
journal, September 2010

  • Fang, Lina Wei-Wei; Zhang, Zheng; Zhao, Rong
  • Journal of Applied Physics, Vol. 108, Issue 5
  • DOI: 10.1063/1.3475721

Terabit-per-square-inch data storage using phase-change media and scanning electrical nanoprobes
journal, January 2006


Power factor investigation of RF magnetron sputtered c-GeSbTe thin film
journal, April 2016


The Conductivity of Lattices of Spheres. I. The Simple Cubic Lattice
journal, January 1978

  • McPhedran, R. C.; McKenzie, D. R.
  • Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 359, Issue 1696
  • DOI: 10.1098/rspa.1978.0031

Electronic Switching in Phase-Change Memories
journal, March 2004

  • Pirovano, A.; Lacaita, A. L.; Benvenuti, A.
  • IEEE Transactions on Electron Devices, Vol. 51, Issue 3
  • DOI: 10.1109/TED.2003.823243

Thermal conductivity of phase-change material Ge2Sb2Te5
journal, October 2006

  • Lyeo, Ho-Ki; Cahill, David G.; Lee, Bong-Sub
  • Applied Physics Letters, Vol. 89, Issue 15
  • DOI: 10.1063/1.2359354

Thermoelectric properties of c -GeSb 0.75 Te 0.5 to h -GeSbTe 0.5 thin films through annealing treatment effects
journal, November 2015


In situ X-ray diffraction study of crystallization process of GeSbTe thin films during heat treatment
journal, May 2005


Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States
journal, July 2008

  • Heremans, J. P.; Jovovic, V.; Toberer, E. S.
  • Science, Vol. 321, Issue 5888, p. 554-557
  • DOI: 10.1126/science.1159725

Modeling of Thermoelectric Effects in Phase Change Memory Cells
journal, February 2014

  • Faraclas, Azer; Bakan, Gokhan; Adnane, L'Hacene
  • IEEE Transactions on Electron Devices, Vol. 61, Issue 2
  • DOI: 10.1109/TED.2013.2296305

Electrical percolation characteristics of Ge2Sb2Te5 and Sn doped Ge2Sb2Te5 thin films during the amorphous to crystalline phase transition
journal, April 2005

  • Kim, Dae-Hwang; Merget, Florian; Laurenzis, Martin
  • Journal of Applied Physics, Vol. 97, Issue 8
  • DOI: 10.1063/1.1875742

Phase purity and the thermoelectric properties of Ge 2 Sb 2 Te 5 films down to 25 nm thickness
journal, July 2012

  • Lee, Jaeho; Kodama, Takashi; Won, Yoonjin
  • Journal of Applied Physics, Vol. 112, Issue 1
  • DOI: 10.1063/1.4731252

The Scherrer Formula for X-Ray Particle Size Determination
journal, November 1939


LVI. On the influence of obstacles arranged in rectangular order upon the properties of a medium
journal, December 1892

  • Rayleigh, Lord
  • The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, Vol. 34, Issue 211
  • DOI: 10.1080/14786449208620364

Impact of Thermoelectric Effects on Phase Change Memory Characteristics
journal, October 2015

  • Ciocchini, Nicola; Laudato, Mario; Leone, Antonio
  • IEEE Transactions on Electron Devices, Vol. 62, Issue 10
  • DOI: 10.1109/TED.2015.2465835

A Reliable Technique for Experimental Evaluation of Crystallization Activation Energy in PCMs
journal, January 2008

  • Redaelli, A.; Pirovano, A.; Tortorelli, I.
  • IEEE Electron Device Letters, Vol. 29, Issue 1
  • DOI: 10.1109/LED.2007.910749

Disorder-induced localization in crystalline phase-change materials
journal, January 2011

  • Siegrist, T.; Jost, P.; Volker, H.
  • Nature Materials, Vol. 10, Issue 3
  • DOI: 10.1038/nmat2934

High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating
journal, October 2015

  • Adnane, L.; Williams, N.; Silva, H.
  • Review of Scientific Instruments, Vol. 86, Issue 10
  • DOI: 10.1063/1.4934577

Phase Change Memory
journal, December 2010


Electronic Properties of Amorphous and Crystalline Ge 2 Sb 2 Te 5 Films
journal, October 2005

  • Kato, Takayuki; Tanaka, Keiji
  • Japanese Journal of Applied Physics, Vol. 44, Issue 10
  • DOI: 10.1143/JJAP.44.7340

Structure of the Ge–Sb–Te phase-change materials studied by theory and experiment
journal, July 2007


Dependences of Electrical Properties of Thin GeSbTe and AgInSbTe Films on Annealing
journal, August 2005

  • Yin, You; Sone, Hayato; Hosaka, Sumio
  • Japanese Journal of Applied Physics, Vol. 44, Issue 8
  • DOI: 10.1143/JJAP.44.6208

Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells
conference, December 2007


The Electrical Resistance of Binary Metallic Mixtures
journal, July 1952


Effect of InP Doping on the Phase Transition of Thin GeSbTe Films
journal, March 2015


A study of phase transition behaviors of chalcogenide layers using in situ alternative-current impedance spectroscopy
journal, June 2012

  • Huang, Yin-Hsien; Huang, Yu-Jen; Hsieh, Tsung-Eong
  • Journal of Applied Physics, Vol. 111, Issue 12
  • DOI: 10.1063/1.4729528

Mechanical Properties of Phase-change Recording Media: GeSbTe Films
journal, May 2001

  • Jong, Chao-An; Fang, Weileung; Lee, Chain-Ming
  • Japanese Journal of Applied Physics, Vol. 40, Issue Part 1, No. 5A
  • DOI: 10.1143/JJAP.40.3320

Scherrer after sixty years: A survey and some new results in the determination of crystallite size
journal, April 1978