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Title: Large area atmospheric-pressure plasma jet

Abstract

Large area atmospheric-pressure plasma jet. A plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250.degree. C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two planar, parallel electrodes are employed to generate a plasma in the volume therebetween. A "jet" of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly spacing the rf-powered electrode. Because of the atmospheric pressure operation, there is a negligible density of ions surviving for a sufficiently long distance beyond the active plasma discharge to bombard a workpiece, unlike the situation for low-pressure plasma sources and conventional plasma processing methods.

Inventors:
 [1];  [1];  [2];  [3]
  1. Los Alamos, NM
  2. Huntington Beach, CA
  3. Los Angeles, CA
Issue Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
OSTI Identifier:
873868
Patent Number(s):
6262523
Assignee:
Regents of University of California (Los Alamos, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05H - PLASMA TECHNIQUE
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
atmospheric-pressure; plasma; jet; discharge; operated; atmospheric; pressure; near; temperature; 13; 56; mhz; rf; power; described; unlike; torches; produces; gas-phase; effluent; hotter; 250; degree; applied; 300; distinct; non-thermal; characteristics; simplest; design; planar; parallel; electrodes; employed; generate; volume; therebetween; long-lived; metastable; reactive; species; capable; rapidly; cleaning; etching; metals; materials; generated; extends; films; coatings; removed; arcing; prevented; apparatus; gas; mixtures; containing; limits; ionization; flow; velocities; properly; spacing; rf-powered; electrode; operation; negligible; density; surviving; sufficiently; distance; active; bombard; workpiece; situation; low-pressure; sources; conventional; processing; methods; flow velocities; atmospheric-pressure plasma; processing methods; processing method; pressure plasma; plasma sources; plasma discharge; gas mixtures; plasma source; atmospheric pressure; gas mixture; plasma process; rf power; plasma processing; plasma torch; reactive species; mixtures containing; plasma jet; volume therebetween; thermal characteristics; parallel electrodes; active species; mhz rf; conventional plasma; unlike plasma; parallel electrode; plasma torches; active plasma; /313/315/

Citation Formats

Selwyn, Gary S, Henins, Ivars, Babayan, Steve E, and Hicks, Robert F. Large area atmospheric-pressure plasma jet. United States: N. p., 2001. Web.
Selwyn, Gary S, Henins, Ivars, Babayan, Steve E, & Hicks, Robert F. Large area atmospheric-pressure plasma jet. United States.
Selwyn, Gary S, Henins, Ivars, Babayan, Steve E, and Hicks, Robert F. Mon . "Large area atmospheric-pressure plasma jet". United States. https://www.osti.gov/servlets/purl/873868.
@article{osti_873868,
title = {Large area atmospheric-pressure plasma jet},
author = {Selwyn, Gary S and Henins, Ivars and Babayan, Steve E and Hicks, Robert F},
abstractNote = {Large area atmospheric-pressure plasma jet. A plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250.degree. C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two planar, parallel electrodes are employed to generate a plasma in the volume therebetween. A "jet" of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly spacing the rf-powered electrode. Because of the atmospheric pressure operation, there is a negligible density of ions surviving for a sufficiently long distance beyond the active plasma discharge to bombard a workpiece, unlike the situation for low-pressure plasma sources and conventional plasma processing methods.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}

Works referenced in this record:

A Ceramic Plasma Torch for Determining Silicon Content in HF Solutions by Inductively Coupled Plasma Atomic Emission Spectrometry
journal, August 1996


Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Deposited at Low Temperatures
journal, June 1995


Synthesis of plasma-polymerized tetraethoxysilane and hexamethyldisiloxane films prepared by atmospheric pressure glow discharge
journal, August 1995


Development and application of a microbeam plasma generator
journal, February 1992


Plasma Chemical Vapor Deposition of SiO2 on Air‐Exposed Surfaces by Cold Plasma Torch
journal, August 1995


The mechanism of the stabilisation of glow plasma at atmospheric pressure
journal, August 1990


Library
journal, November 2005


Low-pressure deposition of high-quality SiO2 films by pyrolysis of tetraethylorthosilicate
journal, November 1987


Open air deposition of SiO 2 film from a cold plasma torch of tetramethoxysilane‐H 2 ‐Ar system
journal, January 1994


Characteristics of Silicon Dioxide Films on Patterned Substrates Prepared by Atmospheric‐Pressure Chemical Vapor Deposition Using Tetraethoxysilane and Ozone
journal, May 1996