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Title: Supported plasma sputtering apparatus for high deposition rate over large area

Abstract

A supported plasma sputtering apparatus is described having shaped electrical fields in the electron discharge region between the cathode and anode and the sputter region between the target and substrate while such regions are free of any externally applied magnetic field to provide a high deposition rate which is substantially uniform over a wide area. Plasma shaping electrodes separate from the anode and target shape the electrical fields in the electron discharge region and the sputter region to provide a high density plasma. The anode surrounds the target to cause substantially uniform sputtering over a large target area. In one embodiment the anode is in the form of an annular ring surrounding a flat target surface, such anode being provided with a ribbed upper surface which shields portions of the anode from exposure to sputtered material to maintain the electron discharge for a long stable operation. Several other embodiments accomplish the same result by using different anodes which either shield the anode from sputtered material, remove the sputtered coating on the anode by heating, or simultaneously mix sputtered metal from the auxiliary target with sputtered insulator from the main target so the resultant coating is conductive. A radio frequency potentialmore » alone or together with a D.C. potential, may be applied to the target for a greater sputtering rate.« less

Inventors:
 [1];  [2];  [1]
  1. Richland, WA
  2. (Richland, WA)
Issue Date:
Research Org.:
Battelle Memorial Institute, Columbus, OH (United States)
OSTI Identifier:
862891
Patent Number(s):
4038171
Assignee:
Battelle Memorial Institute (Columbus, OH)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
AC06-76RL01830
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
supported; plasma; sputtering; apparatus; deposition; rate; described; shaped; electrical; fields; electron; discharge; region; cathode; anode; sputter; target; substrate; regions; free; externally; applied; magnetic; field; provide; substantially; uniform; wide; shaping; electrodes; separate; shape; density; surrounds; embodiment; form; annular; surrounding; flat; surface; provided; ribbed; upper; shields; portions; exposure; sputtered; material; maintain; stable; operation; embodiments; accomplish; result; anodes; shield; remove; coating; heating; simultaneously; mix; metal; auxiliary; insulator; main; resultant; conductive; radio; frequency; potential; shaped electrical; electron discharge; electrical fields; density plasma; electrical field; discharge region; upper surface; radio frequency; magnetic field; substantially uniform; target surface; deposition rate; applied magnetic; sputtering apparatus; externally applied; stable operation; supported plasma; shaped electric; simultaneously mix; plasma sputtering; /204/

Citation Formats

Moss, Ronald W, McClanahan, Jr., Edwin D., and Laegreid, Nils. Supported plasma sputtering apparatus for high deposition rate over large area. United States: N. p., 1977. Web.
Moss, Ronald W, McClanahan, Jr., Edwin D., & Laegreid, Nils. Supported plasma sputtering apparatus for high deposition rate over large area. United States.
Moss, Ronald W, McClanahan, Jr., Edwin D., and Laegreid, Nils. Sat . "Supported plasma sputtering apparatus for high deposition rate over large area". United States. https://www.osti.gov/servlets/purl/862891.
@article{osti_862891,
title = {Supported plasma sputtering apparatus for high deposition rate over large area},
author = {Moss, Ronald W and McClanahan, Jr., Edwin D. and Laegreid, Nils},
abstractNote = {A supported plasma sputtering apparatus is described having shaped electrical fields in the electron discharge region between the cathode and anode and the sputter region between the target and substrate while such regions are free of any externally applied magnetic field to provide a high deposition rate which is substantially uniform over a wide area. Plasma shaping electrodes separate from the anode and target shape the electrical fields in the electron discharge region and the sputter region to provide a high density plasma. The anode surrounds the target to cause substantially uniform sputtering over a large target area. In one embodiment the anode is in the form of an annular ring surrounding a flat target surface, such anode being provided with a ribbed upper surface which shields portions of the anode from exposure to sputtered material to maintain the electron discharge for a long stable operation. Several other embodiments accomplish the same result by using different anodes which either shield the anode from sputtered material, remove the sputtered coating on the anode by heating, or simultaneously mix sputtered metal from the auxiliary target with sputtered insulator from the main target so the resultant coating is conductive. A radio frequency potential alone or together with a D.C. potential, may be applied to the target for a greater sputtering rate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1977},
month = {1}
}

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