skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Plasma generating apparatus for large area plasma processing

Abstract

A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm.sup.2. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity.

Inventors:
 [1];  [1];  [1]
  1. Oak Ridge, TN
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
867907
Patent Number(s):
5032202
Assignee:
Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
plasma; generating; apparatus; processing; applications; based; permanent; magnet; line-cusp; confinement; chamber; coupled; compact; single-coil; microwave; waveguide; launcher; device; creates; electron; cyclotron; resonance; ecr; created; line; cusps; due; 0875; tesla; magnetic; field; region; additional; special; configuring; reduces; substrate; below; 001; resulting; source; capable; producing; large-area; 20-cm; diam; highly; uniform; beams; current; densities; cm; etch; photoresist; 5-inch; silicon; wafers; uniformity; highly uniform; ecr plasma; confinement chamber; current densities; electron cyclotron; plasma source; permanent magnet; magnetic field; plasma process; plasma confinement; plasma processing; cyclotron resonance; silicon wafer; silicon wafers; generating apparatus; resulting plasma; plasma generating; microwave waveguide; /156/118/204/216/219/315/438/

Citation Formats

Tsai, Chin-Chi, Gorbatkin, Steven M, and Berry, Lee A. Plasma generating apparatus for large area plasma processing. United States: N. p., 1991. Web.
Tsai, Chin-Chi, Gorbatkin, Steven M, & Berry, Lee A. Plasma generating apparatus for large area plasma processing. United States.
Tsai, Chin-Chi, Gorbatkin, Steven M, and Berry, Lee A. Tue . "Plasma generating apparatus for large area plasma processing". United States. https://www.osti.gov/servlets/purl/867907.
@article{osti_867907,
title = {Plasma generating apparatus for large area plasma processing},
author = {Tsai, Chin-Chi and Gorbatkin, Steven M and Berry, Lee A},
abstractNote = {A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm.sup.2. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}

Patent:

Save / Share: