Focused ion beam system
Abstract
A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.
- Inventors:
-
- Hercules, CA
- Kensington, CA
- Berkeley, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 872490
- Patent Number(s):
- 5945677
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- focused; beam; fib; produces; final; spot; size; output; current; microamps; increases; source; brightness; properly; configuring; plasma; extraction; electrodes; electrode; configured; aperture; diameter; thickness; aspect; ratio; additional; accelerator; focusing; produce; five; providing; compact; length; 20; multibeamlet; arrangements; single; produced; increase; throughput; nanolithography; doping; applications; fabrication; semiconductor; devices; minimum; feature; sizes; beam output; output current; aspect ratio; semiconductor device; semiconductor devices; spot size; feature sizes; final beam; /250/
Citation Formats
Leung, Ka-Ngo, Gough, Richard A, Ji, Qing, and Lee, Yung-Hee Yvette. Focused ion beam system. United States: N. p., 1999.
Web.
Leung, Ka-Ngo, Gough, Richard A, Ji, Qing, & Lee, Yung-Hee Yvette. Focused ion beam system. United States.
Leung, Ka-Ngo, Gough, Richard A, Ji, Qing, and Lee, Yung-Hee Yvette. Fri .
"Focused ion beam system". United States. https://www.osti.gov/servlets/purl/872490.
@article{osti_872490,
title = {Focused ion beam system},
author = {Leung, Ka-Ngo and Gough, Richard A and Ji, Qing and Lee, Yung-Hee Yvette},
abstractNote = {A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1999},
month = {Fri Jan 01 00:00:00 EST 1999}
}