Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
Abstract
The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.
- Inventors:
- Issue Date:
- Research Org.:
- Harvard Univ., Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1735142
- Patent Number(s):
- 10741399
- Application Number:
- 15/896,940
- Assignee:
- President and Fellows of Harvard College (Cambridge, MA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B23 - MACHINE TOOLS B23K - SOLDERING OR UNSOLDERING
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG36-01GO11053
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 02/14/2018
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Mazur, Eric, and Shen, Mengyan. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate. United States: N. p., 2020.
Web.
Mazur, Eric, & Shen, Mengyan. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate. United States.
Mazur, Eric, and Shen, Mengyan. Tue .
"Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate". United States. https://www.osti.gov/servlets/purl/1735142.
@article{osti_1735142,
title = {Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate},
author = {Mazur, Eric and Shen, Mengyan},
abstractNote = {The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 11 00:00:00 EDT 2020},
month = {Tue Aug 11 00:00:00 EDT 2020}
}
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