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Title: Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

Patent ·
OSTI ID:1109355
;

The present invention generally provides a semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Research Organization:
Harvard College, Cambridge, MA, USA
Sponsoring Organization:
USDOE
DOE Contract Number:
FC36-01GO11053
Assignee:
President and Fellows of Harvard College (Cambridge, MA)
Patent Number(s):
8,598,051
Application Number:
13/021,409
OSTI ID:
1109355
Country of Publication:
United States
Language:
English

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