Title: Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

Abstract

The present invention generally provides a semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Inventors:

Mazur, Eric; Shen, Mengyan

Issue Date:

2013-12-03

Research Org.:

Harvard College, Cambridge, MA, USA

Sponsoring Org.:

USDOE

OSTI Identifier:

1109355

Patent Number(s):

8598051

Application Number:

13/021,409

Assignee:

President and Fellows of Harvard College (Cambridge, MA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/2252 - {using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S438/94 - Laser ablative material removal

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/268 - using electromagnetic radiation, e.g. laser radiation
H01L21/67075 - {for wet etching}
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L29/30 - characterised by physical imperfections
H01L21/02686 - {Pulsed laser beam}
H01L21/0259 - {Microstructure}
H01L21/302 - to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L29/34 - the imperfections being on the surface

B - PERFORMING OPERATIONS B23 - MACHINE TOOLS B23K - SOLDERING OR UNSOLDERING

B23K26/1224 - {in vacuum}

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DOE Contract Number:  

FC36-01GO11053

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE