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Title: Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

Abstract

The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Inventors:
;
Issue Date:
Research Org.:
Harvard Univ., Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1214588
Patent Number(s):
9136146
Application Number:
14/073,460
Assignee:
President And Fellows Of Harvard College (Cambridge, MA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
FC36-01GO11053
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Nov 06
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Mazur, Eric, and Shen, Mengyan. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate. United States: N. p., 2015. Web.
Mazur, Eric, & Shen, Mengyan. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate. United States.
Mazur, Eric, and Shen, Mengyan. Tue . "Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate". United States. https://www.osti.gov/servlets/purl/1214588.
@article{osti_1214588,
title = {Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate},
author = {Mazur, Eric and Shen, Mengyan},
abstractNote = {The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {9}
}

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Works referenced in this record:

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journal, March 2003


Infrared absorption by conical silicon microstructures made in a variety of background gases using femtosecond-laser pulses
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Zn(MgBe)Se ultraviolet photodetectors
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