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Title: Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.
Issue Date:
OSTI Identifier:
President And Fellows Of Harvard College (Cambridge, MA) GFO
Patent Number(s):
Application Number:
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Resource Relation:
Patent File Date: 2013 Nov 06
Research Org:
President And Fellows Of Harvard College, Cambridge, MA (United States)
Sponsoring Org:
Country of Publication:
United States

Works referenced in this record:

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