Title: Tungsten-doped thin film materials

Abstract

A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

Inventors:

Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

Issue Date:

Tue Dec 09 00:00:00 EST 2003

Research Org.:

Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1174612

Patent Number(s):

6660414

Application Number:

09/299,805

Assignee:

U.S. Department of Energy (Washington, DC)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL B01J - CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01G - COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F

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B - PERFORMING OPERATIONS B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL B01J - CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY

B01J2219/0043 - for direct application of reagents, e.g. through openings in a shutter
B01J2219/00745 - Inorganic compounds
B01J2219/00754 - Metal oxides

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01G - COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F

C01G23/006 - {Alkaline earth titanates}

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01P - INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

C01P2002/72 - by d-values or two theta-values, e.g. as X-ray diagram
C01P2006/40 - Electric properties

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA

C04B2235/3206 - Magnesium oxides or oxide-forming salts thereof
C04B2235/3213 - Strontium oxides or oxide-forming salts thereof
C04B2235/3215 - Barium oxides or oxide-forming salts thereof
C04B2235/3225 - Yttrium oxide or oxide-forming salts thereof
C04B2235/3227 - Lanthanum oxide or oxide-forming salts thereof
C04B2235/3229 - Cerium oxides or oxide-forming salts thereof
C04B2235/3241 - Chromium oxides, chromates, or oxide-forming salts thereof
C04B2235/3258 - Tungsten oxides, tungstates, or oxide-forming salts thereof
C04B2235/3262 - Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
C04B2235/3272 - Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite
C04B35/4682 - {based on BaTiO3 perovskite phase}
C04B35/47 - based on strontium titanates

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C14/088 - {of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal}
C23C14/5806 - {Thermal treatment}

C - CHEMISTRY C40 - COMBINATORIAL TECHNOLOGY C40B - COMBINATORIAL CHEMISTRY

C40B60/14 - for creating libraries

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02197 - {the material having a perovskite structure, e.g. BaTiO3}
H01L21/02266 - {deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition}
H01L21/31691 - {with perovskite structure}

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DOE Contract Number:  

AC03-76SF00098

Resource Type:

Patent

Resource Relation:

Patent File Date: 1999 Apr 26

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE