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Title: Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

Abstract

Systems and methods of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment in contact with the sample.

Inventors:
; ;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1735299
Patent Number(s):
10784104
Application Number:
16/004,175
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/08/2018
Country of Publication:
United States
Language:
English

Citation Formats

Eastman, Jeffrey A., Veal, Boyd W., and Zapol, Peter. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures. United States: N. p., 2020. Web.
Eastman, Jeffrey A., Veal, Boyd W., & Zapol, Peter. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures. United States.
Eastman, Jeffrey A., Veal, Boyd W., and Zapol, Peter. Tue . "Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures". United States. https://www.osti.gov/servlets/purl/1735299.
@article{osti_1735299,
title = {Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures},
author = {Eastman, Jeffrey A. and Veal, Boyd W. and Zapol, Peter},
abstractNote = {Systems and methods of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment in contact with the sample.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {9}
}

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