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Title: Fluorine compounds for doping conductive oxide thin films

Abstract

Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1083316
Patent Number(s):
8,425,978
Application Number:
12/884,490
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Gessert, Tim, Li, Xiaonan, Barnes, Teresa M, Torres, Jr., Robert, and Wyse, Carrie L. Fluorine compounds for doping conductive oxide thin films. United States: N. p., 2013. Web.
Gessert, Tim, Li, Xiaonan, Barnes, Teresa M, Torres, Jr., Robert, & Wyse, Carrie L. Fluorine compounds for doping conductive oxide thin films. United States.
Gessert, Tim, Li, Xiaonan, Barnes, Teresa M, Torres, Jr., Robert, and Wyse, Carrie L. Tue . "Fluorine compounds for doping conductive oxide thin films". United States. https://www.osti.gov/servlets/purl/1083316.
@article{osti_1083316,
title = {Fluorine compounds for doping conductive oxide thin films},
author = {Gessert, Tim and Li, Xiaonan and Barnes, Teresa M and Torres, Jr., Robert and Wyse, Carrie L},
abstractNote = {Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {4}
}

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