Fluorine compounds for doping conductive oxide thin films
Abstract
Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1083316
- Patent Number(s):
- 8425978
- Application Number:
- 12/884,490
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Gessert, Tim, Li, Xiaonan, Barnes, Teresa M, Torres, Jr., Robert, and Wyse, Carrie L. Fluorine compounds for doping conductive oxide thin films. United States: N. p., 2013.
Web.
Gessert, Tim, Li, Xiaonan, Barnes, Teresa M, Torres, Jr., Robert, & Wyse, Carrie L. Fluorine compounds for doping conductive oxide thin films. United States.
Gessert, Tim, Li, Xiaonan, Barnes, Teresa M, Torres, Jr., Robert, and Wyse, Carrie L. Tue .
"Fluorine compounds for doping conductive oxide thin films". United States. https://www.osti.gov/servlets/purl/1083316.
@article{osti_1083316,
title = {Fluorine compounds for doping conductive oxide thin films},
author = {Gessert, Tim and Li, Xiaonan and Barnes, Teresa M and Torres, Jr., Robert and Wyse, Carrie L},
abstractNote = {Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {4}
}
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