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Title: Thin film dielectric composite materials

Abstract

A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

Inventors:
 [1];  [1];  [1];  [1]
  1. Los Alamos, NM
Issue Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
OSTI Identifier:
874702
Patent Number(s):
6444336
Assignee:
The Regents of the University of California (Los Alamos, NM)
Patent Classifications (CPCs):
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
film; dielectric; composite; materials; material; comprising; crystal; phases; components; tiosub2; component; selected; consisting; basub1-x; srsubx; tiosub3; 03; 07; pbsub1-x; casubx; 04; srsub1-x; pbsubx; 02; cdsubx; 002; 01; batisub1-x; zrsubx; osub3; snsubx; 015; hfsubx; 024; pbsub1-13x; lasubx; tiosub302x; 023; batiosub3subx; pbfeosub05; nbsub05; osub3sub1-x; 075; 09; pbtiosub3sub-; pbcosub05; wsub05; 045; pbtiosub3subx; pbmgsub05; pbfesub05; tasub05; described; formed; substrates; composite material; suitable substrate; crystal phase; omposite materials; /428/501/

Citation Formats

Jia, Quanxi, Gibbons, Brady J, Findikoglu, Alp T, and Park, Bae Ho. Thin film dielectric composite materials. United States: N. p., 2002. Web.
Jia, Quanxi, Gibbons, Brady J, Findikoglu, Alp T, & Park, Bae Ho. Thin film dielectric composite materials. United States.
Jia, Quanxi, Gibbons, Brady J, Findikoglu, Alp T, and Park, Bae Ho. Tue . "Thin film dielectric composite materials". United States. https://www.osti.gov/servlets/purl/874702.
@article{osti_874702,
title = {Thin film dielectric composite materials},
author = {Jia, Quanxi and Gibbons, Brady J and Findikoglu, Alp T and Park, Bae Ho},
abstractNote = {A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Works referenced in this record:

Mg-doped Ba0.6Sr0.4TiO3 thin films for tunable microwave applications
journal, July 2000


Composition-control of magnetron-sputter-deposited (BaxSr1−x)Ti1+yO3+z thin films for voltage tunable devices
journal, January 2000