Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

Eastman, Jeffrey A.; Veal, Boyd W.; Zapol, Peter

Title: Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

Patent · Tue Sep 22 00:00:00 EDT 2020

OSTI ID:1735299

Eastman, Jeffrey A.; Veal, Boyd W.; Zapol, Peter

Systems and methods of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment in contact with the sample.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-06CH11357

Assignee:: UChicago Argonne, LLC (Chicago, IL)

Patent Number(s):: 10,784,104

Application Number:: 16/004,175

OSTI ID:: 1735299

Resource Relation:: Patent File Date: 06/08/2018

Country of Publication:: United States

Language:: English

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