Processing approach towards the formation of thin-film Cu(In,Ga)Se2
Abstract
A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420.degree. C.-550.degree. C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-III-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S).sub.2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.
- Inventors:
-
- Falkensee, DE
- Golden, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 875039
- Patent Number(s):
- 6518086
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC36-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- processing; approach; towards; formation; thin-film; cuingase2; two-stage; method; producing; thin-films; ib-iiia-via; substrate; semiconductor; device; applications; stage; depositing; amorphous; precursor; unheated; contains; iiia; constituents; produced; stoichiometric; amounts; final; product; involves; subjecting; thermal; treatment; 420degree; c-550degree; vacuum; inert; atmosphere; produce; single-phase; ib-iii-via; film; via; element; amount; films; example; cuingasessub2; mixed-metal; chalcogenides; resultant; supported; photovoltaic; semiconductor device; inert atmosphere; metal chalcogenide; /438/136/
Citation Formats
Beck, Markus E, and Noufi, Rommel. Processing approach towards the formation of thin-film Cu(In,Ga)Se2. United States: N. p., 2003.
Web.
Beck, Markus E, & Noufi, Rommel. Processing approach towards the formation of thin-film Cu(In,Ga)Se2. United States.
Beck, Markus E, and Noufi, Rommel. Wed .
"Processing approach towards the formation of thin-film Cu(In,Ga)Se2". United States. https://www.osti.gov/servlets/purl/875039.
@article{osti_875039,
title = {Processing approach towards the formation of thin-film Cu(In,Ga)Se2},
author = {Beck, Markus E and Noufi, Rommel},
abstractNote = {A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420.degree. C.-550.degree. C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-III-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S).sub.2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {1}
}