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Title: Processing approach towards the formation of thin-film Cu(In,Ga)Se2

Abstract

A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420.degree. C.-550.degree. C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-III-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S).sub.2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.

Inventors:
 [1];  [2]
  1. Falkensee, DE
  2. Golden, CO
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
OSTI Identifier:
875039
Patent Number(s):
6518086
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
processing; approach; towards; formation; thin-film; cuingase2; two-stage; method; producing; thin-films; ib-iiia-via; substrate; semiconductor; device; applications; stage; depositing; amorphous; precursor; unheated; contains; iiia; constituents; produced; stoichiometric; amounts; final; product; involves; subjecting; thermal; treatment; 420degree; c-550degree; vacuum; inert; atmosphere; produce; single-phase; ib-iii-via; film; via; element; amount; films; example; cuingasessub2; mixed-metal; chalcogenides; resultant; supported; photovoltaic; semiconductor device; inert atmosphere; metal chalcogenide; /438/136/

Citation Formats

Beck, Markus E, and Noufi, Rommel. Processing approach towards the formation of thin-film Cu(In,Ga)Se2. United States: N. p., 2003. Web.
Beck, Markus E, & Noufi, Rommel. Processing approach towards the formation of thin-film Cu(In,Ga)Se2. United States.
Beck, Markus E, and Noufi, Rommel. Wed . "Processing approach towards the formation of thin-film Cu(In,Ga)Se2". United States. https://www.osti.gov/servlets/purl/875039.
@article{osti_875039,
title = {Processing approach towards the formation of thin-film Cu(In,Ga)Se2},
author = {Beck, Markus E and Noufi, Rommel},
abstractNote = {A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420.degree. C.-550.degree. C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-III-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S).sub.2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {1}
}

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