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Title: Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells

Abstract

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.

Inventors:
 [1];  [2];  [3];  [3];  [1];  [3];  [4]
  1. (Golden, CO)
  2. (Boulder, CO)
  3. (Denver, CO)
  4. (Evergreen, CO)
Issue Date:
Research Org.:
Midwest Research Institute (Kansas City, MO)
Sponsoring Org.:
USDOE
OSTI Identifier:
870025
Patent Number(s):
5441897
Application Number:
08/197,204
Assignee:
Midwest Research Institute (Kansas City, MO) CHO
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; fabricating; high-efficiency; cu; films; solar; cells; process; producing; slightly; cu-poor; film; comprises; depositing; layer; followed; produce; desired; material; variation; 90; 99; deposited; deposition; near; stoichiometric; possibly; preferably; cu-rich; remainder; 10; composition; portion; seed; mixture; final; slightly cu-poor; solar cell; solar cells; comprises depositing; rich mixture; seed layer; near stoichiometric; /438/136/427/

Citation Formats

Noufi, Rommel, Gabor, Andrew M., Tuttle, John R., Tennant, Andrew L., Contreras, Miguel A., Albin, David S., and Carapella, Jeffrey J. Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells. United States: N. p., 1995. Web.
Noufi, Rommel, Gabor, Andrew M., Tuttle, John R., Tennant, Andrew L., Contreras, Miguel A., Albin, David S., & Carapella, Jeffrey J. Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells. United States.
Noufi, Rommel, Gabor, Andrew M., Tuttle, John R., Tennant, Andrew L., Contreras, Miguel A., Albin, David S., and Carapella, Jeffrey J. Sun . "Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells". United States. https://www.osti.gov/servlets/purl/870025.
@article{osti_870025,
title = {Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells},
author = {Noufi, Rommel and Gabor, Andrew M. and Tuttle, John R. and Tennant, Andrew L. and Contreras, Miguel A. and Albin, David S. and Carapella, Jeffrey J.},
abstractNote = {A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}

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