Title: Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

Abstract

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Inventors:

Haight, Richard A.; Hannon, James B.; Oida, Satoshi

Issue Date:

2018-04-03

Research Org.:

International Business Machines Corp., Armonk, NY (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1432813

Patent Number(s):

9935214

Application Number:

14/880,808

Assignee:

International Business Machines Corporation, Armonk, NY

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/02168 - {the coatings being antireflective or having enhancing optical properties for the solar cells}
H01L31/022425 - {for solar cells}
H01L31/022441 - {Electrode arrangements specially adapted for back-contact solar cells}
H01L31/022466 - {made of transparent conductive layers, e.g. TCO, ITO layers}
H01L31/0324 - {comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te}
H01L31/0326 - {comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4}
H01L31/03923 - {including AIBIIICVI compound materials, e.g. CIS, CIGS}
H01L31/03925 - {including AIIBVI compound materials, e.g. CdTe, CdS}
H01L31/03926 - {comprising a flexible substrate}
H01L31/0445 - including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
H01L31/072 - the potential barriers being only of the PN heterojunction type
H01L31/1892 - {methods involving the use of temporary, removable substrates}
H01L31/1896 - {for thin-film semiconductors}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/50 - Photovoltaic [PV] energy

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DOE Contract Number:  

EE0006334

Resource Type:

Patent

Resource Relation:

Patent File Date: 2015 Oct 12

Country of Publication:

United States

Language:

English

Subject:

42 ENGINEERING