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Title: Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

Abstract

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Inventors:
; ;
Issue Date:
Research Org.:
International Business Machines Corporation, Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1432813
Patent Number(s):
9,935,214
Application Number:
14/880,808
Assignee:
International Business Machines Corporation, Armonk, NY DOEEE
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Oct 12
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Haight, Richard A., Hannon, James B., and Oida, Satoshi. Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation. United States: N. p., 2018. Web.
Haight, Richard A., Hannon, James B., & Oida, Satoshi. Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation. United States.
Haight, Richard A., Hannon, James B., and Oida, Satoshi. Tue . "Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation". United States. https://www.osti.gov/servlets/purl/1432813.
@article{osti_1432813,
title = {Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation},
author = {Haight, Richard A. and Hannon, James B. and Oida, Satoshi},
abstractNote = {A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {4}
}

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Works referenced in this record:

Thin film photovoltaic structure
patent-application, December 2007


Thin film photovoltaic structure
patent-application, December 2007


GaSe Formation at the Cu(In,Ga)Se2/Mo Interface-A Novel Approach for Flexible Solar Cells by Easy Mechanical Lift-Off
journal, May 2014

  • Fleutot, Benoit; Lincot, Daniel; Jubault, Marie
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Layer-Resolved Graphene Transfer via Engineered Strain Layers
journal, October 2013


Package-Free Flexible Organic Solar Cells with Graphene top Electrodes
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  • Liu, Zhike; Li, Jinhua; Yan, Feng
  • Advanced Materials, Vol. 25, Issue 31, p. 4296-4301
  • DOI: 10.1002/adma.201205337