Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
Abstract
A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.
- Inventors:
- Issue Date:
- Research Org.:
- International Business Machines Corp., Armonk, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1459574
- Patent Number(s):
- 10008618
- Application Number:
- 15/658,790
- Assignee:
- International Business Machines Corporation (Armonk, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- EE0006334
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2017 Jul 25
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Haight, Richard A., Hannon, James B., and Oida, Satoshi. Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation. United States: N. p., 2018.
Web.
Haight, Richard A., Hannon, James B., & Oida, Satoshi. Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation. United States.
Haight, Richard A., Hannon, James B., and Oida, Satoshi. Tue .
"Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation". United States. https://www.osti.gov/servlets/purl/1459574.
@article{osti_1459574,
title = {Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation},
author = {Haight, Richard A. and Hannon, James B. and Oida, Satoshi},
abstractNote = {A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {6}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
GaSe Formation at the Cu(In,Ga)Se2/Mo Interface-A Novel Approach for Flexible Solar Cells by Easy Mechanical Lift-Off
journal, May 2014
- Fleutot, Benoit; Lincot, Daniel; Jubault, Marie
- Advanced Materials Interfaces, Vol. 1, Issue 4, Article No. 1400044
Layer-Resolved Graphene Transfer via Engineered Strain Layers
journal, October 2013
- Kim, J.; Park, H.; Hannon, J. B.
- Science, Vol. 342, Issue 6160, p. 833-836
Package-Free Flexible Organic Solar Cells with Graphene top Electrodes
journal, April 2013
- Liu, Zhike; Li, Jinhua; Yan, Feng
- Advanced Materials, Vol. 25, Issue 31, p. 4296-4301