Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

Title: Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

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A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Inventors:: Haight, Richard A.; Hannon, James B.; Oida, Satoshi

Issue Date:: 2018-06-26

OSTI Identifier:: 1459574

Assignee:: International Business Machines Corporation (Armonk, NY) DOEEE

Patent Number(s):: 10,008,618

Application Number:: 15/658,790

Contract Number:: EE0006334

Resource Relation:: Patent File Date: 2017 Jul 25

Research Org:: International Business Machines Corporation, Armonk, NY (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

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