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Title: Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1459574
Assignee:
International Business Machines Corporation (Armonk, NY) DOEEE
Patent Number(s):
10,008,618
Application Number:
15/658,790
Contract Number:
EE0006334
Resource Relation:
Patent File Date: 2017 Jul 25
Research Org:
International Business Machines Corporation, Armonk, NY (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English

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