Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

Title: Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

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Abstract

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Inventors:: Haight, Richard A.; Hannon, James B.; Oida, Satoshi

Issue Date:: 2018-06-26

Research Org.:: International Business Machines Corporation, Armonk, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1459574

Patent Number(s):: 10,008,618

Application Number:: 15/658,790

Assignee:: International Business Machines Corporation (Armonk, NY) DOEEE

DOE Contract Number:: EE0006334

Resource Type:: Patent

Resource Relation:: Patent File Date: 2017 Jul 25

Country of Publication:: United States

Language:: English

Citation Formats


                    Haight, Richard A., Hannon, James B., and Oida, Satoshi. Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation.  United States: N. p., 2018. 
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                    Haight, Richard A., Hannon, James B., & Oida, Satoshi. Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation.  United States.

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                    Haight, Richard A., Hannon, James B., and Oida, Satoshi. Tue .  
        "Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation".  United States.  https://www.osti.gov/servlets/purl/1459574.

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@article{osti_1459574,

  title        = {Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation},

  author       = {Haight, Richard A. and Hannon, James B. and Oida, Satoshi},

  abstractNote = {A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2018},

  month        = {6}

}

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