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Title: Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

Abstract

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se)(CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Inventors:
; ;
Issue Date:
Research Org.:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568248
Patent Number(s):
10269994
Application Number:
15/845,455
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 12/18/2017
Country of Publication:
United States
Language:
English

Citation Formats

Haight, Richard A., Hannon, James B., and Oida, Satoshi. Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation. United States: N. p., 2019. Web.
Haight, Richard A., Hannon, James B., & Oida, Satoshi. Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation. United States.
Haight, Richard A., Hannon, James B., and Oida, Satoshi. Tue . "Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation". United States. https://www.osti.gov/servlets/purl/1568248.
@article{osti_1568248,
title = {Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation},
author = {Haight, Richard A. and Hannon, James B. and Oida, Satoshi},
abstractNote = {A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se)(CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {4}
}

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Works referenced in this record:

Crack-tolerant photovoltaic cell structure and fabrication method
patent, July 2017


Quaternary chalcogenide wafers
patent, July 2013


Quaternary chalcogenide wafers
patent, April 2014


Thin film photovoltaic structure
patent-application, December 2007


Thin film photovoltaic structure
patent-application, December 2007


Method to form a photovoltaic cell comprising a thin lamina
patent, July 2013