Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

Haight, Richard A.; Hannon, James B.; Oida, Satoshi

Title: Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

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Abstract

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se)(CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Inventors:: Haight, Richard A.; Hannon, James B.; Oida, Satoshi

Issue Date:: 2019-04-23

Research Org.:: International Business Machines Corp., Armonk, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1568248

Patent Number(s):: 10269994

Application Number:: 15/845,455

Assignee:: International Business Machines Corporation (Armonk, NY)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/03923 - {including AIBIIICVI compound materials, e.g. CIS, CIGS}
H01L31/022441 - {Electrode arrangements specially adapted for back-contact solar cells}
H01L31/072 - the potential barriers being only of the PN heterojunction type

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/1892 - {methods involving the use of temporary, removable substrates}
H01L31/022466 - {made of transparent conductive layers, e.g. TCO, ITO layers}
H01L31/022425 - {for solar cells}
H01L31/1896 - {for thin-film semiconductors}
H01L31/0324 - {comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te}
H01L31/0326 - {comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4}
H01L31/03925 - {including AIIBVI compound materials, e.g. CdTe, CdS}
H01L31/03926 - {comprising a flexible substrate}
H01L31/02168 - {the coatings being antireflective or having enhancing optical properties for the solar cells}
H01L31/0445 - including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells

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DOE Contract Number:: EE0006334

Resource Type:: Patent

Resource Relation:: Patent File Date: 12/18/2017

Country of Publication:: United States

Language:: English

Citation Formats


                    Haight, Richard A., Hannon, James B., and Oida, Satoshi. Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation.  United States: N. p., 2019. 
        Web.

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                    Haight, Richard A., Hannon, James B., & Oida, Satoshi. Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation.  United States.

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                    Haight, Richard A., Hannon, James B., and Oida, Satoshi. Tue .  
        "Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation".  United States.  https://www.osti.gov/servlets/purl/1568248.

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@article{osti_1568248,

  title        = {Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation},

  author       = {Haight, Richard A. and Hannon, James B. and Oida, Satoshi},

  abstractNote = {A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se)(CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {4}

}

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A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.
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