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Title: Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization

Abstract

Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

Inventors:
 [1];  [2];  [2];  [1]
  1. (Denver, CO)
  2. (Golden, CO)
Issue Date:
Research Org.:
MIDWEST RESEARCH INSTITUTE
OSTI Identifier:
869565
Patent Number(s):
5356839
Assignee:
Midwest Research Institute (Kansas City, MO) NREL
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
enhanced; quality; film; cu; semiconductor; device; applications; vapor-phase; recrystallization; films; z; fabricated; initially; forming; cu-rich; phase-separated; compound; mixture; comprising; substrate; form; large-grain; precursor; converting; excess; exposing; activity; vapor; solid; alternatively; conversion; sequential; deposition; process; preferably; performed; temperature; range; 300; degree; -600; remains; liquid; flux; characteristic; resulting; controlled; temperatures; 500; result; nearly; stoichiometric; -400; cu-poor; phase; conversion process; device applications; temperature range; semiconductor device; mixture comprising; remains solid; compound mixture; preferably performed; excess cu; enhanced quality; resulting cu; comprising cu; /438/136/

Citation Formats

Tuttle, John R., Contreras, Miguel A., Noufi, Rommel, and Albin, David S. Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization. United States: N. p., 1994. Web.
Tuttle, John R., Contreras, Miguel A., Noufi, Rommel, & Albin, David S. Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization. United States.
Tuttle, John R., Contreras, Miguel A., Noufi, Rommel, and Albin, David S. Sat . "Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization". United States. https://www.osti.gov/servlets/purl/869565.
@article{osti_869565,
title = {Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization},
author = {Tuttle, John R. and Contreras, Miguel A. and Noufi, Rommel and Albin, David S.},
abstractNote = {Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

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