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Title: Mesoporous silica film from a solution containing a surfactant and methods of making same

Abstract

The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.

Inventors:
 [1];  [2];  [3];  [4];  [4];  [3];  [4];  [3];  [3]
  1. West Richland, WA
  2. Cambridge, MA
  3. Richland, WA
  4. Kennewick, WA
Issue Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
874160
Patent Number(s):
6329017
Application Number:
09/413,062
Assignee:
Battelle Memorial Institute (Richland, WA) PNNL
DOE Contract Number:  
AC06-76RL01830
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
mesoporous; silica; film; solution; containing; surfactant; methods; dielectric; constant; method; steps; combining; precursor; spin-coating; mixture; forming; partially; hydroxylated; dehydroxylating; obtain; advantageous; polyoxyethylene; surfactants; spin-coated; films; described; result; fine; pores; average; 20; nm; resulting; stable; moist; air; specific; humidity; provides; superior; control; thickness; uniformity; coated; wafer; film thickness; porous silica; /427/

Citation Formats

Liu, Jun, Domansky, Karel, Li, Xiaohong, Fryxell, Glen E, Baskaran, Suresh, Kohler, Nathan J, Thevuthasan, Suntharampillai, Coyle, Christopher A, and Birnbaum, Jerome C. Mesoporous silica film from a solution containing a surfactant and methods of making same. United States: N. p., 2001. Web.
Liu, Jun, Domansky, Karel, Li, Xiaohong, Fryxell, Glen E, Baskaran, Suresh, Kohler, Nathan J, Thevuthasan, Suntharampillai, Coyle, Christopher A, & Birnbaum, Jerome C. Mesoporous silica film from a solution containing a surfactant and methods of making same. United States.
Liu, Jun, Domansky, Karel, Li, Xiaohong, Fryxell, Glen E, Baskaran, Suresh, Kohler, Nathan J, Thevuthasan, Suntharampillai, Coyle, Christopher A, and Birnbaum, Jerome C. Tue . "Mesoporous silica film from a solution containing a surfactant and methods of making same". United States. https://www.osti.gov/servlets/purl/874160.
@article{osti_874160,
title = {Mesoporous silica film from a solution containing a surfactant and methods of making same},
author = {Liu, Jun and Domansky, Karel and Li, Xiaohong and Fryxell, Glen E and Baskaran, Suresh and Kohler, Nathan J and Thevuthasan, Suntharampillai and Coyle, Christopher A and Birnbaum, Jerome C},
abstractNote = {The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {12}
}

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