Title: Mesoporous silica film from a solution containing a surfactant and methods of making same

Abstract

The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.

Inventors:

Liu, Jun ^[1]; Domansky, Karel ^[2]; Li, Xiaohong ^[3]; Fryxell, Glen E ^[4]; Baskaran, Suresh ^[4]; Kohler, Nathan J ^[3]; Thevuthasan, Suntharampillai ^[4]; Coyle, Christopher A ^[3]; Birnbaum, Jerome C ^[3]

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+ Show Inventor Affiliations

1. West Richland, WA
2. Cambridge, MA
3. Richland, WA
4. Kennewick, WA

Issue Date:

2001-12-11

Research Org.:

Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

874160

Patent Number(s):

6329017

Application Number:

09/413,062

Assignee:

Battelle Memorial Institute (Richland, WA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02203 - {the layer being porous}
H01L21/02216 - {the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane}

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

C01B37/02 - Crystalline silica-polymorphs, e.g. silicalites {dealuminated aluminosilicate zeolites}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02282 - {liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating}
H01L21/02222 - {the compound being a silazane}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T428/249972 - Resin or rubber element

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02337 - {treatment by exposure to a gas or vapour}
H01L21/02164 - {the material being a silicon oxide, e.g. SiO2}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T428/249969 - Of silicon-containing material [e.g., glass, etc.]

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/31695 - {Deposition of porous oxides or porous glassy oxides or oxide based porous glass}

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DOE Contract Number:  

AC06-76RL01830

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

mesoporous; silica; film; solution; containing; surfactant; methods; dielectric; constant; method; steps; combining; precursor; spin-coating; mixture; forming; partially; hydroxylated; dehydroxylating; obtain; advantageous; polyoxyethylene; surfactants; spin-coated; films; described; result; fine; pores; average; 20; nm; resulting; stable; moist; air; specific; humidity; provides; superior; control; thickness; uniformity; coated; wafer; film thickness; porous silica; /427/