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Title: Mesoporous silica film from a solution containing a surfactant and methods of making same

Abstract

The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.

Inventors:
 [1];  [2];  [3];  [4];  [4];  [3];  [4];  [3];  [3]
  1. West Richland, WA
  2. Cambridge, MA
  3. Richland, WA
  4. Kennewick, WA
Issue Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
874160
Patent Number(s):
6329017
Application Number:
09/413,062
Assignee:
Battelle Memorial Institute (Richland, WA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
DOE Contract Number:  
AC06-76RL01830
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
mesoporous; silica; film; solution; containing; surfactant; methods; dielectric; constant; method; steps; combining; precursor; spin-coating; mixture; forming; partially; hydroxylated; dehydroxylating; obtain; advantageous; polyoxyethylene; surfactants; spin-coated; films; described; result; fine; pores; average; 20; nm; resulting; stable; moist; air; specific; humidity; provides; superior; control; thickness; uniformity; coated; wafer; film thickness; porous silica; /427/

Citation Formats

Liu, Jun, Domansky, Karel, Li, Xiaohong, Fryxell, Glen E, Baskaran, Suresh, Kohler, Nathan J, Thevuthasan, Suntharampillai, Coyle, Christopher A, and Birnbaum, Jerome C. Mesoporous silica film from a solution containing a surfactant and methods of making same. United States: N. p., 2001. Web.
Liu, Jun, Domansky, Karel, Li, Xiaohong, Fryxell, Glen E, Baskaran, Suresh, Kohler, Nathan J, Thevuthasan, Suntharampillai, Coyle, Christopher A, & Birnbaum, Jerome C. Mesoporous silica film from a solution containing a surfactant and methods of making same. United States.
Liu, Jun, Domansky, Karel, Li, Xiaohong, Fryxell, Glen E, Baskaran, Suresh, Kohler, Nathan J, Thevuthasan, Suntharampillai, Coyle, Christopher A, and Birnbaum, Jerome C. Tue . "Mesoporous silica film from a solution containing a surfactant and methods of making same". United States. https://www.osti.gov/servlets/purl/874160.
@article{osti_874160,
title = {Mesoporous silica film from a solution containing a surfactant and methods of making same},
author = {Liu, Jun and Domansky, Karel and Li, Xiaohong and Fryxell, Glen E and Baskaran, Suresh and Kohler, Nathan J and Thevuthasan, Suntharampillai and Coyle, Christopher A and Birnbaum, Jerome C},
abstractNote = {The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {12}
}

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Works referenced in this record:

Synthesis of a Stable Hexagonally Packed Mesoporous Niobium Oxide Molecular Sieve Through a Novel Ligand-Assisted Templating Mechanism
journal, March 1996


Templating of Mesoporous Molecular Sieves by Nonionic Polyethylene Oxide Surfactants
journal, September 1995


A Neutral Templating Route to Mesoporous Molecular Sieves
journal, February 1995


A new family of mesoporous molecular sieves prepared with liquid crystal templates
journal, December 1992


Recent advances in the synthesis, characterization and applications of mesoporous molecular sieves
journal, February 1996


Cooperative organization of inorganic-surfactant and biomimetic assemblies
journal, February 1995


Ordered mesoporous molecular sieves synthesized by a liquid-crystal template mechanism
journal, October 1992


Organization of Organic Molecules with Inorganic Molecular Species into Nanocomposite Biphase Arrays
journal, August 1994


Formation of a Porous Zirconium Oxo Phosphate with a High Surface Area by a Surfactant-Assisted Synthesis
journal, March 1996


Synthesis and Characterization of Hexagonally Packed Mesoporous Tantalum Oxide Molecular Sieves
journal, January 1996


Free-standing and oriented mesoporous silica films grown at the air–water interface
journal, June 1996