Method of dehydroxylating a hydroxylated material and method of making a mesoporous film

Patent · Tue May 07 00:00:00 EDT 2002

OSTI ID:874403

Domansky, Karel ^[1]; Fryxell, Glen E ^[2]; Liu, Jun ^[3]; Kohler, Nathan J ^[1]; Baskaran, Suresh ^[2]

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1. Richland, WA
2. Kennewick, WA
3. West Richland, WA

The present invention is a method of dehydroxylating a silica surface that is hydroxylated having the steps of exposing the silica surface separately to a silicon organic compound and a dehydroxylating gas. Exposure to the silicon organic compound can be in liquid, gas or solution phase, and exposure to a dehydroxylating gas is typically at elevated temperatures. In one embodiment, the improvement of the dehydroxylation procedure is the repetition of the soaking and dehydroxylating gas exposure. In another embodiment, the improvement is the use of an inert gas that is substantially free of hydrogen. In yet another embodiment, the present invention is the combination of the two-step dehydroxylation method with a surfactant templating method of making a mesoporous film.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC06-76RL01830
• Assignee: Battelle Memorial Institute (Richland, WA)
• Patent Number(s): 6,383,466
• OSTI ID: 874403
• Country of Publication: United States
• Language: English

Related Subjects

method
dehydroxylating
hydroxylated
material
mesoporous
film
silica
surface
steps
exposing
separately
silicon
organic
compound
gas
exposure
liquid
solution
phase
typically
elevated
temperatures
embodiment
improvement
dehydroxylation
procedure
repetition
soaking
inert
substantially
free
hydrogen
combination
two-step
surfactant
templating
inert gas
elevated temperature
substantially free
organic compound
porous film
/423/516/