skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ion-induced electron emission microscopy

Abstract

An ion beam analysis system that creates multidimensional maps of the effects of high energy ions from an unfocussed source upon a sample by correlating the exact entry point of an ion into a sample by projection imaging of the secondary electrons emitted at that point with a signal from a detector that measures the interaction of that ion within the sample. The emitted secondary electrons are collected in a strong electric field perpendicular to the sample surface and (optionally) projected and refocused by the electron lenses found in a photon emission electron microscope, amplified by microchannel plates and then their exact position is sensed by a very sensitive X Y position detector. Position signals from this secondary electron detector are then correlated in time with nuclear, atomic or electrical effects, including the malfunction of digital circuits, detected within the sample that were caused by the individual ion that created these secondary electrons in the fit place.

Inventors:
 [1];  [1];  [2]
  1. (Albuquerque, NM)
  2. (Brentwood, TN)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
874008
Patent Number(s):
6291823
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
ion-induced; electron; emission; microscopy; beam; analysis; creates; multidimensional; maps; effects; energy; unfocussed; source; sample; correlating; exact; entry; projection; imaging; secondary; electrons; emitted; signal; detector; measures; interaction; collected; strong; electric; field; perpendicular; surface; optionally; projected; refocused; lenses; found; photon; microscope; amplified; microchannel; plates; position; sensed; sensitive; signals; correlated; time; nuclear; atomic; electrical; including; malfunction; digital; circuits; detected; caused; individual; created; fit; channel plate; sample surface; emission electron; electron emission; electron microscope; electric field; microchannel plate; photon emission; electrons emitted; secondary electrons; secondary electron; microchannel plates; position detector; position signal; electron detector; field perpendicular; digital circuits; /250/

Citation Formats

Doyle, Barney L., Vizkelethy, Gyorgy, and Weller, Robert A. Ion-induced electron emission microscopy. United States: N. p., 2001. Web.
Doyle, Barney L., Vizkelethy, Gyorgy, & Weller, Robert A. Ion-induced electron emission microscopy. United States.
Doyle, Barney L., Vizkelethy, Gyorgy, and Weller, Robert A. Mon . "Ion-induced electron emission microscopy". United States. https://www.osti.gov/servlets/purl/874008.
@article{osti_874008,
title = {Ion-induced electron emission microscopy},
author = {Doyle, Barney L. and Vizkelethy, Gyorgy and Weller, Robert A.},
abstractNote = {An ion beam analysis system that creates multidimensional maps of the effects of high energy ions from an unfocussed source upon a sample by correlating the exact entry point of an ion into a sample by projection imaging of the secondary electrons emitted at that point with a signal from a detector that measures the interaction of that ion within the sample. The emitted secondary electrons are collected in a strong electric field perpendicular to the sample surface and (optionally) projected and refocused by the electron lenses found in a photon emission electron microscope, amplified by microchannel plates and then their exact position is sensed by a very sensitive X Y position detector. Position signals from this secondary electron detector are then correlated in time with nuclear, atomic or electrical effects, including the malfunction of digital circuits, detected within the sample that were caused by the individual ion that created these secondary electrons in the fit place.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Patent:

Save / Share: