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Title: X-ray lithography using holographic images

A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.
 [1];  [2]
  1. (Berkeley, CA)
  2. (Sound Beach, NY)
Issue Date:
OSTI Identifier:
Regents of Univerity of Calif. (Oakland, CA) LBNL
Patent Number(s):
US 5455850
Contract Number:
Research Org:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
Country of Publication:
United States
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