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Title: Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

Abstract

A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

Inventors:
 [1];  [2];  [1]
  1. Albuquerque, NM
  2. Tijeras, NM
Issue Date:
Research Org.:
AT&T
OSTI Identifier:
868587
Patent Number(s):
5171399
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
reflection; mass; spectrometry; technique; monitoring; controlling; composition; molecular; beam; epitaxy; method; on-line; accurate; precise; control; epitaxial; growth; iii-iii-v; iii-v-v; layers; advanced; semiconductor; device; incorporates; responsive; intentional; perturbations; fluxes; incident; substrate; accurately; measuring; reflected; flux; extremely; sensitive; growing; surface; measurements; obtained; enable; newly; forming; surfaces; dynamically; changing; result; precise control; extremely sensitive; semiconductor device; molecular beam; mass spectrometry; epitaxial growth; accurately measuring; beam epitaxy; measurements obtained; spectrometry technique; accurate monitoring; forming surface; /117/

Citation Formats

Brennan, Thomas M, Hammons, B Eugene, and Tsao, Jeffrey Y. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy. United States: N. p., 1992. Web.
Brennan, Thomas M, Hammons, B Eugene, & Tsao, Jeffrey Y. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy. United States.
Brennan, Thomas M, Hammons, B Eugene, and Tsao, Jeffrey Y. Wed . "Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy". United States. https://www.osti.gov/servlets/purl/868587.
@article{osti_868587,
title = {Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy},
author = {Brennan, Thomas M and Hammons, B Eugene and Tsao, Jeffrey Y},
abstractNote = {A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {1}
}

Works referenced in this record:

Surface stoichiometry and structure of GaAs
journal, June 1974


Cation incorporation rate limitations in molecular-beam epitaxy: Effects of strain and surface composition
journal, March 1989


Surface‐stoichiometry dependence of As 2 desorption and As 4 ‘‘reflection’’ from GaAs(001)
journal, May 1989

  • Tsao, J. Y.; Brennan, T. M.; Klem, J. F.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 3
  • https://doi.org/10.1116/1.575943

Mass spectrometry during molecular-beam epitaxy: An alternative to reflection high-energy electron diffraction
journal, March 1988


Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurements
journal, July 1974


Summary Abstract: Composition of AlGaAs films grown by molecular beam epitaxy
journal, March 1986


On‐line determination of alloy composition during ternary III/V molecular beam epitaxy
journal, August 1989


Application of reflection mass spectrometry to molecular-beam epitaxial growth of InAlAs and InGaAs
journal, March 1989


Reflection mass spectrometry of As incorporation during GaAs molecular beam epitaxy
journal, July 1988