Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy
Abstract
A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.
- Inventors:
-
- Albuquerque, NM
- Tijeras, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 868587
- Patent Number(s):
- 5171399
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- reflection; mass; spectrometry; technique; monitoring; controlling; composition; molecular; beam; epitaxy; method; on-line; accurate; precise; control; epitaxial; growth; iii-iii-v; iii-v-v; layers; advanced; semiconductor; device; incorporates; responsive; intentional; perturbations; fluxes; incident; substrate; accurately; measuring; reflected; flux; extremely; sensitive; growing; surface; measurements; obtained; enable; newly; forming; surfaces; dynamically; changing; result; precise control; extremely sensitive; semiconductor device; molecular beam; mass spectrometry; epitaxial growth; accurately measuring; beam epitaxy; measurements obtained; spectrometry technique; accurate monitoring; forming surface; /117/
Citation Formats
Brennan, Thomas M, Hammons, B Eugene, and Tsao, Jeffrey Y. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy. United States: N. p., 1992.
Web.
Brennan, Thomas M, Hammons, B Eugene, & Tsao, Jeffrey Y. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy. United States.
Brennan, Thomas M, Hammons, B Eugene, and Tsao, Jeffrey Y. Wed .
"Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy". United States. https://www.osti.gov/servlets/purl/868587.
@article{osti_868587,
title = {Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy},
author = {Brennan, Thomas M and Hammons, B Eugene and Tsao, Jeffrey Y},
abstractNote = {A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {1}
}
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