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Title: Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

Abstract

A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth. 3 figs.

Inventors:
; ;
Issue Date:
OSTI Identifier:
7205480
Patent Number(s):
5171399 A
Application Number:
PPN: US 7-567512
Assignee:
Dept. of Energy, Washington, DC (United States) SNL; EDB-94-089184
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Patent File Date: 15 Aug 1990
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; SEMICONDUCTOR MATERIALS; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; ON-LINE MEASUREMENT SYSTEMS; PERFORMANCE; PROCESS CONTROL; SPECTROMETERS; CONTROL; EPITAXY; MATERIALS; MEASURING INSTRUMENTS; ON-LINE SYSTEMS; SPECTROSCOPY; 360601* - Other Materials- Preparation & Manufacture; 400102 - Chemical & Spectral Procedures

Citation Formats

Brennan, T.M., Hammons, B.E., and Tsao, J.Y. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy. United States: N. p., 1992. Web.
Brennan, T.M., Hammons, B.E., & Tsao, J.Y. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy. United States.
Brennan, T.M., Hammons, B.E., and Tsao, J.Y. Tue . "Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy". United States.
@article{osti_7205480,
title = {Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy},
author = {Brennan, T.M. and Hammons, B.E. and Tsao, J.Y.},
abstractNote = {A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth. 3 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {12}
}