Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

Title: Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

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Abstract

A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth. 3 figs.

Inventors:: Brennan, T.M.; Hammons, B.E.; Tsao, J.Y.

Issue Date:: 1992-12-15

OSTI Identifier:: 7205480

Patent Number(s):: 5171399 A

Application Number:: PPN: US 7-567512

Assignee:: Dept. of Energy, Washington, DC (United States) SNL; EDB-94-089184

DOE Contract Number:: AC04-76DP00789

Resource Type:: Patent

Resource Relation:: Patent File Date: 15 Aug 1990

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; SEMICONDUCTOR MATERIALS; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; ON-LINE MEASUREMENT SYSTEMS; PERFORMANCE; PROCESS CONTROL; SPECTROMETERS; CONTROL; EPITAXY; MATERIALS; MEASURING INSTRUMENTS; ON-LINE SYSTEMS; SPECTROSCOPY; 360601* - Other Materials- Preparation & Manufacture; 400102 - Chemical & Spectral Procedures

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                    Brennan, T.M., Hammons, B.E., and Tsao, J.Y. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy.  United States: N. p., 1992. 
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                    Brennan, T.M., Hammons, B.E., & Tsao, J.Y. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy.  United States.

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                    Brennan, T.M., Hammons, B.E., and Tsao, J.Y. Tue .  
        "Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy".  United States.

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@article{osti_7205480,

  title        = {Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy},

  author       = {Brennan, T.M. and Hammons, B.E. and Tsao, J.Y.},

  abstractNote = {A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth. 3 figs.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1992},

  month        = {12}

}

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Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

Patent Application Brennan, T.M.; Hammons, B.E.; Tsao, J.Y.

This invention is comprised of a method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.
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Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

Patent Brennan, Thomas M. (Albuquerque, NM); Hammons, B. Eugene (Tijeras, NM); Tsao, Jeffrey Y. (Albuquerque, NM)

A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.
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Reflection mass spectrometry of As incorporation during GaAs molecular beam epitaxy

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An apertured and cryoshrouded mass spectrometer, which measures line-of-sight molecular fluxes from the surface, has been incorporated into a GaAs molecular beam epitaxy system. The spectrometer is simple to implement, yet is a powerful real-time growth diagnostic. We have used the spectrometer to measure transient and steady-state As incorporation from As/sub 4/ during bilayer-by-bilayer growth of GaAs. We find, interestingly, that (1) the incorporation coefficient does not oscillate significantly; (2) transient incorporation coefficients depend on surface reconstruction, and may be higher than 0.5 at high Ga fluxes; and (3) in the absence of a Ga flux, excess Ga on themore »« less
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Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry

Journal Article Osaka, J.; Senthil Kumar, M.; Toyoda, H.; ... - Applied Physics Letters

To identify the species which contribute to GaN growth, the authors investigated the discharge parameter (0.3-4.8 SCCM (SCCM denotes cubic centimeter per minute at STP), 150-400 W) dependences of the atomic N flux by appearance mass spectrometry and of the incorporated nitrogen atoms into GaN layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using the rf-plasma source. Ion fluxes were also evaluated by ion current measurements. A good correlation between the supplied atomic N flux and the incorporated nitrogen flux was obtained under a wide range of plasma conditions. It was clarified that the atomic N plays a dominant rolemore » in the growth of GaN by PAMBE.« less
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Reflection mass spectrometry (REMS) has been used to monitor In fluxes leaving the surface, and to optimize growth conditions during molecular-beam epitaxial (MBE) growth of InAlAs and InGaAs on InP. The optical, electrical, and structural properties of the films are shown to be a function of the measured indium signal. This optimization technique is independent of thermocouple or pyrometer readings to set the growth temperature, and has led to significant improvements in the optical and electrical properties of lattice matched InAlAs on InP. REMS-optimized unintentionally doped InAlAs has been grown with electron concentrations as low as 3 x 10/sup 15//cm/supmore »« less
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