skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

Abstract

This invention is comprised of a method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

Inventors:
; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10159251
Patent Number(s):
PATENTS-US-A7567512
Application Number:
ON: DE92017035
Assignee:
Dept. of Energy
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent Application
Resource Relation:
Other Information: PBD: 15 Aug 1990
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION; MOLECULAR BEAM EPITAXY; MONITORING; ON-LINE CONTROL SYSTEMS; SEMICONDUCTOR MATERIALS; MASS SPECTROSCOPY; REAL TIME SYSTEMS; INVENTIONS; DESIGN; REFLECTIVITY; CRYSTALS; ALUMINIUM; GALLIUM; INDIUM; PHOSPHORUS; ANTIMONY; ARSENIC; 360601; 440800; PREPARATION AND MANUFACTURE; MISCELLANEOUS INSTRUMENTATION

Citation Formats

Brennan, T M, Hammons, B E, and Tsao, J Y. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy. United States: N. p., 1990. Web.
Brennan, T M, Hammons, B E, & Tsao, J Y. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy. United States.
Brennan, T M, Hammons, B E, and Tsao, J Y. Wed . "Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy". United States. https://www.osti.gov/servlets/purl/10159251.
@article{osti_10159251,
title = {Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy},
author = {Brennan, T M and Hammons, B E and Tsao, J Y},
abstractNote = {This invention is comprised of a method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.},
doi = {},
url = {https://www.osti.gov/biblio/10159251}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {8}
}

Patent Application:

Save / Share: