Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

Patent Application · Wed Aug 15 00:00:00 EDT 1990

OSTI ID:10159251

Brennan, T M; Hammons, B E; Tsao, J Y

This invention is comprised of a method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• Assignee: Dept. of Energy
• Patent Number(s): PATENTS-US-A7567512
• Application Number: ON: DE92017035
• OSTI ID: 10159251
• Resource Relation: Other Information: PBD: 15 Aug 1990
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
47 OTHER INSTRUMENTATION
MOLECULAR BEAM EPITAXY
MONITORING
ON-LINE CONTROL SYSTEMS
SEMICONDUCTOR MATERIALS
MASS SPECTROSCOPY
REAL TIME SYSTEMS
INVENTIONS
DESIGN
REFLECTIVITY
CRYSTALS
ALUMINIUM
GALLIUM
INDIUM
PHOSPHORUS
ANTIMONY
ARSENIC
360601
440800
PREPARATION AND MANUFACTURE
MISCELLANEOUS INSTRUMENTATION