Method for making defect-free zone by laser-annealing of doped silicon
Abstract
This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.
- Inventors:
-
- Knoxville, TN
- Oak Ridge, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 863479
- Patent Number(s):
- 4181538
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; defect-free; zone; laser-annealing; doped; silicon; improving; electrical; properties; semiconductor; material; comprises; irradiating; selected; surface; layer; high-power; laser; pulses; characterized; special; combination; wavelength; energy; level; duration; effects; melting; degrading; minority-carrier; diffusion; length; applicable; n-; p-type; form; junction; therein; application; virtually; complete; removal; doping-induced; defects; ion-implanted; diffusion-doped; substrates; selected surface; high-power laser; carrier diffusion; silicon substrates; diffusion length; energy level; laser pulses; method comprises; laser pulse; semiconductor material; silicon substrate; surface layer; electrical properties; power laser; doped silicon; method comprise; complete removal; silicon semiconductor; comprises irradiating; virtually complete; electrical junction; junction therein; /438/136/148/219/257/
Citation Formats
Narayan, Jagdish, White, Clark W, and Young, Rosa T. Method for making defect-free zone by laser-annealing of doped silicon. United States: N. p., 1980.
Web.
Narayan, Jagdish, White, Clark W, & Young, Rosa T. Method for making defect-free zone by laser-annealing of doped silicon. United States.
Narayan, Jagdish, White, Clark W, and Young, Rosa T. Tue .
"Method for making defect-free zone by laser-annealing of doped silicon". United States. https://www.osti.gov/servlets/purl/863479.
@article{osti_863479,
title = {Method for making defect-free zone by laser-annealing of doped silicon},
author = {Narayan, Jagdish and White, Clark W and Young, Rosa T},
abstractNote = {This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {1}
}
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