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Title: Silicon release coating, method of making same, and method of using same

Abstract

A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000.degree. C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.

Inventors:
 [1]
  1. Wilmington, DE
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1032965
Patent Number(s):
8,062,704
Application Number:
11/832,871
Assignee:
Motech Americas, LLC (Newark, DE)
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Jonczyk, Ralf. Silicon release coating, method of making same, and method of using same. United States: N. p., 2011. Web.
Jonczyk, Ralf. Silicon release coating, method of making same, and method of using same. United States.
Jonczyk, Ralf. Tue . "Silicon release coating, method of making same, and method of using same". United States. https://www.osti.gov/servlets/purl/1032965.
@article{osti_1032965,
title = {Silicon release coating, method of making same, and method of using same},
author = {Jonczyk, Ralf},
abstractNote = {A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000.degree. C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {11}
}

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