Silicon release coating, method of making same, and method of using same
Abstract
A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000.degree. C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.
- Inventors:
-
- Wilmington, DE
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1032965
- Patent Number(s):
- 8062704
- Application Number:
- 11/832,871
- Assignee:
- Motech Americas, LLC (Newark, DE)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Jonczyk, Ralf. Silicon release coating, method of making same, and method of using same. United States: N. p., 2011.
Web.
Jonczyk, Ralf. Silicon release coating, method of making same, and method of using same. United States.
Jonczyk, Ralf. Tue .
"Silicon release coating, method of making same, and method of using same". United States. https://www.osti.gov/servlets/purl/1032965.
@article{osti_1032965,
title = {Silicon release coating, method of making same, and method of using same},
author = {Jonczyk, Ralf},
abstractNote = {A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000.degree. C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {11}
}
Works referenced in this record:
Nitride-bonded silicon nitride from slip-cast Si + Si 3 N 4 compacts
journal, February 2002
- Rao, R. Ramachandra; Kannan, T. S.
- Journal of Materials Research, Vol. 17, Issue 2