Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere
Abstract
A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1133446
- Patent Number(s):
- 8734674
- Application Number:
- 13/457,070
- Assignee:
- Northwestern University (Evanston, IL)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01M - PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC02-06CH11357
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 25 ENERGY STORAGE; 36 MATERIALS SCIENCE
Citation Formats
Hersam, Mark C., Lipson, Albert L., Bandyopadhyay, Sudeshna, Karmel, Hunter J, and Bedzyk, Michael J. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere. United States: N. p., 2014.
Web.
Hersam, Mark C., Lipson, Albert L., Bandyopadhyay, Sudeshna, Karmel, Hunter J, & Bedzyk, Michael J. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere. United States.
Hersam, Mark C., Lipson, Albert L., Bandyopadhyay, Sudeshna, Karmel, Hunter J, and Bedzyk, Michael J. Tue .
"Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere". United States. https://www.osti.gov/servlets/purl/1133446.
@article{osti_1133446,
title = {Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere},
author = {Hersam, Mark C. and Lipson, Albert L. and Bandyopadhyay, Sudeshna and Karmel, Hunter J and Bedzyk, Michael J},
abstractNote = {A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 27 00:00:00 EDT 2014},
month = {Tue May 27 00:00:00 EDT 2014}
}
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