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Title: Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.
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Issue Date:
OSTI Identifier:
Northwestern University (Evanston, IL) CHO
Patent Number(s):
Application Number:
Contract Number:
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
Country of Publication:
United States

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