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Title: Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

Abstract

A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1133446
Patent Number(s):
8734674
Application Number:
13/457,070
Assignee:
Northwestern University (Evanston, IL)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01M - PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
25 ENERGY STORAGE; 36 MATERIALS SCIENCE

Citation Formats

Hersam, Mark C., Lipson, Albert L., Bandyopadhyay, Sudeshna, Karmel, Hunter J, and Bedzyk, Michael J. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere. United States: N. p., 2014. Web.
Hersam, Mark C., Lipson, Albert L., Bandyopadhyay, Sudeshna, Karmel, Hunter J, & Bedzyk, Michael J. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere. United States.
Hersam, Mark C., Lipson, Albert L., Bandyopadhyay, Sudeshna, Karmel, Hunter J, and Bedzyk, Michael J. Tue . "Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere". United States. https://www.osti.gov/servlets/purl/1133446.
@article{osti_1133446,
title = {Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere},
author = {Hersam, Mark C. and Lipson, Albert L. and Bandyopadhyay, Sudeshna and Karmel, Hunter J and Bedzyk, Michael J},
abstractNote = {A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {5}
}

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