skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

Abstract

A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

Inventors:
 [1];  [2]
  1. (Princeton, NJ)
  2. (Trenton, NJ)
Issue Date:
Research Org.:
RCA Corp
OSTI Identifier:
864162
Patent Number(s):
4322253
Assignee:
RCA Corporation (New York, NY) OAK
DOE Contract Number:  
AC03-78ET21074
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; selective; crystalline; silicon; regions; containing; entrapped; hydrogen; laser; treatment; novel; rich; single; material; band; gap; energy; fabricated; forming; amorphous; region; graded; crystallinity; thereafter; contacting; atomic; followed; pulsed; annealing; sufficient; power; duration; recrystallize; out-gasing; fabricate; semi-conductor; devices; solar; cells; surface; window; silicon material; gap energy; atomic hydrogen; laser annealing; regions containing; thereafter contacting; single crystalline; band gap; solar cell; solar cells; pulsed laser; silicon solar; single crystal; crystalline silicon; hydrogen rich; semi-conductor device; sufficient power; sufficient duration; surface window; containing entrapped; rich single; selective crystalline; novel hydrogen; graded crystallinity; silicon region; amorphous region; laser treatment; /438/117/136/219/257/427/

Citation Formats

Pankove, Jacques I., and Wu, Chung P. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment. United States: N. p., 1982. Web.
Pankove, Jacques I., & Wu, Chung P. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment. United States.
Pankove, Jacques I., and Wu, Chung P. Fri . "Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment". United States. https://www.osti.gov/servlets/purl/864162.
@article{osti_864162,
title = {Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment},
author = {Pankove, Jacques I. and Wu, Chung P.},
abstractNote = {A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {1}
}

Patent:

Save / Share: