Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

Patent · Fri Jan 01 00:00:00 EST 1982

OSTI ID:864162

Pankove, Jacques I ^[1]; Wu, Chung P ^[2]

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1. Princeton, NJ
2. Trenton, NJ

A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

• Research Organization: RCA Corp
• DOE Contract Number: AC03-78ET21074
• Assignee: RCA Corporation (New York, NY)
• Patent Number(s): US 4322253
• OSTI ID: 864162
• Country of Publication: United States
• Language: English

Related Subjects

method
selective
crystalline
silicon
regions
containing
entrapped
hydrogen
laser
treatment
novel
rich
single
material
band
gap
energy
fabricated
forming
amorphous
region
graded
crystallinity
thereafter
contacting
atomic
followed
pulsed
annealing
sufficient
power
duration
recrystallize
out-gasing
fabricate
semi-conductor
devices
solar
cells
surface
window
silicon material
gap energy
atomic hydrogen
laser annealing
regions containing
thereafter contacting
single crystalline
band gap
solar cell
solar cells
pulsed laser
silicon solar
single crystal
crystalline silicon
hydrogen rich
semi-conductor device
sufficient power
sufficient duration
surface window
containing entrapped
rich single
selective crystalline
novel hydrogen
graded crystallinity
silicon region
amorphous region
laser treatment
/438/117/136/219/257/427/