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Title: Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films

Abstract

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

Inventors:
;
Issue Date:
Research Org.:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1925074
Patent Number(s):
11437234
Application Number:
16/985,455
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG02-06ER46327
Resource Type:
Patent
Resource Relation:
Patent File Date: 08/05/2020
Country of Publication:
United States
Language:
English

Citation Formats

Eom, Chang-Beom, and Lee, Jungwoo. Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films. United States: N. p., 2022. Web.
Eom, Chang-Beom, & Lee, Jungwoo. Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films. United States.
Eom, Chang-Beom, and Lee, Jungwoo. Tue . "Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films". United States. https://www.osti.gov/servlets/purl/1925074.
@article{osti_1925074,
title = {Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films},
author = {Eom, Chang-Beom and Lee, Jungwoo},
abstractNote = {Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {9}
}

Works referenced in this record:

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain
journal, February 2011