Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films
Abstract
Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Wisconsin, Madison, WI (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1925074
- Patent Number(s):
- 11437234
- Application Number:
- 16/985,455
- Assignee:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-06ER46327
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 08/05/2020
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Eom, Chang-Beom, and Lee, Jungwoo. Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films. United States: N. p., 2022.
Web.
Eom, Chang-Beom, & Lee, Jungwoo. Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films. United States.
Eom, Chang-Beom, and Lee, Jungwoo. Tue .
"Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films". United States. https://www.osti.gov/servlets/purl/1925074.
@article{osti_1925074,
title = {Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films},
author = {Eom, Chang-Beom and Lee, Jungwoo},
abstractNote = {Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 06 00:00:00 EDT 2022},
month = {Tue Sep 06 00:00:00 EDT 2022}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain
journal, February 2011
- Bark, C. W.; Felker, D. A.; Wang, Y.
- Proceedings of the National Academy of Sciences, Vol. 108, Issue 12