Title: Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films

Abstract

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

Inventors:

Eom, Chang-Beom; Lee, Jungwoo

Issue Date:

2020-10-06

Research Org.:

Univ. of Wisconsin, Madison, WI (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1771486

Patent Number(s):

10796907

Application Number:

16/252,783

Assignee:

Wisconsin Alumni Research Foundation (Madison, WI)

Patent Classifications (CPCs):

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C14/0021 - {Reactive sputtering or evaporation}
C23C14/088 - {of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal}
C23C14/28 - by wave energy or particle radiation
C23C16/409 - {of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02414 - {Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}
H01L21/0242 - {Crystalline insulating materials}
H01L21/02565 - {Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}
H01L21/02631 - {Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation}
H01L29/24 - including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
H01L29/778 - with two-dimensional charge carrier gas channel, e.g. HEMT {

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DOE Contract Number:  

FG02-06ER46327

Resource Type:

Patent

Resource Relation:

Patent File Date: 01/21/2019

Country of Publication:

United States

Language:

English

Subject:

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY