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Title: Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films

Abstract

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

Inventors:
;
Issue Date:
Research Org.:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1771486
Patent Number(s):
10796907
Application Number:
16/252,783
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
FG02-06ER46327
Resource Type:
Patent
Resource Relation:
Patent File Date: 01/21/2019
Country of Publication:
United States
Language:
English

Citation Formats

Eom, Chang-Beom, and Lee, Jungwoo. Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films. United States: N. p., 2020. Web.
Eom, Chang-Beom, & Lee, Jungwoo. Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films. United States.
Eom, Chang-Beom, and Lee, Jungwoo. Tue . "Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films". United States. https://www.osti.gov/servlets/purl/1771486.
@article{osti_1771486,
title = {Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films},
author = {Eom, Chang-Beom and Lee, Jungwoo},
abstractNote = {Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {10}
}

Works referenced in this record:

Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO 3 films
journal, November 2013


Localization of two-dimensional electron gas in LaAlO 3 /SrTiO 3 heterostructures
journal, April 2012


Creation of a two-dimensional electron gas at an oxide interface on silicon
journal, October 2010


Ultrathin oxide films and interfaces for electronics and spintronics
journal, February 2011


Stoichiometry of SrTiO 3 films grown by pulsed laser deposition
journal, May 2012


Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain
journal, February 2011


Anisotropic electrical transport properties of a two-dimensional electron gas at SrTiO3–LaAlO3 interfaces
journal, June 2011