Nanostructured substrates for improved lift-off of III-V thin films

Chin, Alan; Ning, Cun-Zheng

Title: Nanostructured substrates for improved lift-off of III-V thin films

Abstract

Reusable nanostructured substrates for forming semiconductor thin films, such as those used in solar cells, are configured with nanopillars to permit improved lift-off of thin films.

Inventors:: Chin, Alan; Ning, Cun-Zheng

Issue Date:: 2019-09-03

Research Org.:: Arizona State Univ., Scottsdale, AZ (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1576402

Patent Number(s):: 10403783

Application Number:: 16/261,027

Assignee:: Arizona Board of Regents on behalf of Arizona State University (Scottsdale, AZ)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/0265 - {Pendeoepitaxy}
H01L31/035281 - {Shape of the body}
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L31/1896 - {for thin-film semiconductors}
H01L21/02455 - {Group 13/15 materials}
H01L21/02513 - {Microstructure}
H01L31/1844 - {comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P}
H01L31/184 - {the active layers comprising only AIIIBV compounds, e.g. GaAs, InP}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/3086 - {characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}
H01L21/02639 - {Preparation of substrate for selective deposition}
H01L31/046 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate

Show less

DOE Contract Number:: EE0007369

Resource Type:: Patent

Resource Relation:: Patent File Date: 2019 Jan 29

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; 77 NANOSCIENCE AND NANOTECHNOLOGY; 42 ENGINEERING; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Chin, Alan, and Ning, Cun-Zheng. Nanostructured substrates for improved lift-off of III-V thin films.  United States: N. p., 2019. 
        Web.

Copy to clipboard


                    Chin, Alan, & Ning, Cun-Zheng. Nanostructured substrates for improved lift-off of III-V thin films.  United States.

Copy to clipboard


                    Chin, Alan, and Ning, Cun-Zheng. Tue .  
        "Nanostructured substrates for improved lift-off of III-V thin films".  United States.  https://www.osti.gov/servlets/purl/1576402.

Copy to clipboard


                    
@article{osti_1576402,

  title        = {Nanostructured substrates for improved lift-off of III-V thin films},

  author       = {Chin, Alan and Ning, Cun-Zheng},

  abstractNote = {Reusable nanostructured substrates for forming semiconductor thin films, such as those used in solar cells, are configured with nanopillars to permit improved lift-off of thin films.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {9}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Laterally varying II-VI alloys and uses thereof
patent, March 2017

Ning, Cun-Zheng; Pan, Anlian
US Patent Document 9,589,793
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9589793

Multi-bandgap semiconductor structures and methods for using them
patent, February 2016

Ning, Cun-Zheng; Liu, Zhicheng; Yin, Leijun
US Patent Document 9,267,076
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9267076

Methods and Devices for Fabricating and Assembling Printable Semiconductor Elements
patent-application, December 2013

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne
US Patent Application 13/801868; 20130320503
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220130320503%22.PGNR.&OS=DN/20130320503&RS=DN/20130320503

Similar Records in DOE Patents and OSTI.GOV collections:

Method of lift-off patterning thin films in situ employing phase change resists

Patent Bahlke, Matthias Erhard; Baldo, Marc A; Mendoza, Hiroshi Antonio

Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because ofmore » the phase change.« less
Full Text Available
Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys

Patent Norman, Andrew G [Evergreen, CO]; Olson, Jerry M [Lakewood, CO]

Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructuremore » (18) product for various applications.« less
Full Text Available
Growth of single crystal III-V semiconductors on amorphous substrates

Patent Chen, Kevin; Kapadia, Rehan; Javey, Ali

This disclosure provides systems, methods, and apparatus related to the growth of single crystal III-V semiconductors on amorphous substrates. In one aspect, a shape of a semiconductor structure to be formed on an amorphous substrate is defined in a resist disposed on the amorphous substrate. A boron group element is deposited over the amorphous substrate. A ceramic material is deposited on the boron group element. The resist is removed from the amorphous substrate. The ceramic material is deposited to cover the boron group element. The amorphous substrate and materials deposited thereon are heated in the presence of a gas includingmore »« less
Full Text Available
Generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate

Patent Dong, Boqun; Zaghloul, Mona

A device employing the generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate (e.g., GaAs, GaSb, InAs, or InGaAs). The device includes two SiO₂/ZnO islands, each including a SiO₂ buffer layer deposited on the doped p-type III-V semiconductor substrate and a ZnO layer deposited on the SiO₂ buffer layer. An input interdigital transducers (IDT) and an output IDT are each patterned on one of the SiO₂/ZnO islands. The IDTs generates surface acoustic waves along an exposed surface of the highly doped p-type III-V semiconductor substrate. The surface acoustic waves improve the photoelectric and photovoltaicmore »« less
Full Text Available
Annealed nanostructured thin film catalyst

Patent Debe, Mark K.; Smithson, Robert L. W.; Studiner, IV, Charles J.; ...

This disclosure provides methods of making an enhanced activity nanostructured thin film catalyst by radiation annealing, typically laser annealing, typically under inert atmosphere. Typically the inert gas has a residual oxygen level of 100 ppm. Typically the irradiation has an incident energy fluence of at least 30 mJ/mm2. In some embodiments, the radiation annealing is accomplished by laser annealing. In some embodiments, the nanostructured thin film catalyst is provided on a continuous web.
Full Text Available

Similar Records

Title: Nanostructured substrates for improved lift-off of III-V thin films

Abstract

Citation Formats

Laterally varying II-VI alloys and uses thereof patent, March 2017

Multi-bandgap semiconductor structures and methods for using them patent, February 2016

Methods and Devices for Fabricating and Assembling Printable Semiconductor Elements patent-application, December 2013

Laterally varying II-VI alloys and uses thereof
patent, March 2017

Multi-bandgap semiconductor structures and methods for using them
patent, February 2016

Methods and Devices for Fabricating and Assembling Printable Semiconductor Elements
patent-application, December 2013