Nanostructured substrates for improved lift-off of III-V thin films

Title: Nanostructured substrates for improved lift-off of III-V thin films

Abstract

Reusable nanostructured substrates for forming semiconductor thin films, such as those used in solar cells, are configured with nanopillars to permit improved lift-off of thin films.

Inventors:: Chin, Alan; Ning, Cun-Zheng

Issue Date:: 2019-09-03

Research Org.:: Arizona State Univ., Scottsdale, AZ (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1576402

Patent Number(s):: 10403783

Application Number:: 16/261,027

Assignee:: Arizona Board of Regents on behalf of Arizona State University (Scottsdale, AZ)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/0265 - {Pendeoepitaxy}
H01L31/035281 - {Shape of the body}
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L31/1896 - {for thin-film semiconductors}
H01L21/02455 - {Group 13/15 materials}
H01L21/02513 - {Microstructure}
H01L31/184 - {the active layers comprising only AIIIBV compounds, e.g. GaAs, InP}
H01L31/1844 - {comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P}
H01L21/3086 - {characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02639 - {Preparation of substrate for selective deposition}
H01L31/046 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate

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DOE Contract Number:: EE0007369

Resource Type:: Patent

Resource Relation:: Patent File Date: 2019 Jan 29

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; 77 NANOSCIENCE AND NANOTECHNOLOGY; 42 ENGINEERING; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Chin, Alan, and Ning, Cun-Zheng. Nanostructured substrates for improved lift-off of III-V thin films.  United States: N. p., 2019. 
        Web.

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                    Chin, Alan, & Ning, Cun-Zheng. Nanostructured substrates for improved lift-off of III-V thin films.  United States.

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                    Chin, Alan, and Ning, Cun-Zheng. Tue .  
        "Nanostructured substrates for improved lift-off of III-V thin films".  United States.  https://www.osti.gov/servlets/purl/1576402.

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@article{osti_1576402,

  title        = {Nanostructured substrates for improved lift-off of III-V thin films},

  author       = {Chin, Alan and Ning, Cun-Zheng},

  abstractNote = {Reusable nanostructured substrates for forming semiconductor thin films, such as those used in solar cells, are configured with nanopillars to permit improved lift-off of thin films.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {9}

}

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Works referenced in this record:

Laterally varying II-VI alloys and uses thereof
patent, March 2017

Ning, Cun-Zheng; Pan, Anlian
US Patent Document 9,589,793
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9589793

Multi-bandgap semiconductor structures and methods for using them
patent, February 2016

Ning, Cun-Zheng; Liu, Zhicheng; Yin, Leijun
US Patent Document 9,267,076
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9267076

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Title: Nanostructured substrates for improved lift-off of III-V thin films

Abstract

Citation Formats

Laterally varying II-VI alloys and uses thereof patent, March 2017

Multi-bandgap semiconductor structures and methods for using them patent, February 2016

Laterally varying II-VI alloys and uses thereof
patent, March 2017

Multi-bandgap semiconductor structures and methods for using them
patent, February 2016