Title: Growth of single crystal III-V semiconductors on amorphous substrates

Abstract

This disclosure provides systems, methods, and apparatus related to the growth of single crystal III-V semiconductors on amorphous substrates. In one aspect, a shape of a semiconductor structure to be formed on an amorphous substrate is defined in a resist disposed on the amorphous substrate. A boron group element is deposited over the amorphous substrate. A ceramic material is deposited on the boron group element. The resist is removed from the amorphous substrate. The ceramic material is deposited to cover the boron group element. The amorphous substrate and materials deposited thereon are heated in the presence of a gas including a nitrogen group element to grow a single crystal semiconductor structure comprising the boron group element and the nitrogen group element.

Inventors:

Chen, Kevin; Kapadia, Rehan; Javey, Ali

Issue Date:

2018-10-02

Research Org.:

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1490732

Patent Number(s):

10087547

Application Number:

15/354,063

Assignee:

The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B25/04 - Pattern deposit, e.g. by using masks

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02505 - {consisting of more than two layers}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B25/02 - Epitaxial-layer growth

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02543 - {Phosphides}
H01L21/02428 - {Structure}
H01L21/02422 - {Non-crystalline insulating materials, e.g. glass, polymers}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B1/10 - by solid state reactions or multi-phase diffusion

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02494 - {Structure}
H01L21/02538 - {Group 13/15 materials}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/403 - {AIII-nitrides}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02488 - {Insulating materials}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/40 - AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
C30B1/023 - {from solids with amorphous structure}
C30B1/02 - by thermal treatment, e.g. strain annealing

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DOE Contract Number:  

AC02-05CH11231

Resource Type:

Patent

Resource Relation:

Patent File Date: 2016 Nov 17

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE