Title: Growth of single crystal III-V semiconductors on amorphous substrates

Abstract

This disclosure provides systems, methods, and apparatus related to the growth of single crystal III-V semiconductors on amorphous substrates. In one aspect, a shape of a semiconductor structure to be formed on an amorphous substrate is defined in a resist disposed on the amorphous substrate. A boron group element is deposited over the amorphous substrate. A ceramic material is deposited on the boron group element. The resist is removed from the amorphous substrate. The ceramic material is deposited to cover the boron group element. The amorphous substrate and materials deposited thereon are heated in the presence of a gas including a nitrogen group element to grow a single crystal semiconductor structure comprising the boron group element and the nitrogen group element.

Inventors:

Chen, Kevin; Kapadia, Rehan; Javey, Ali

Issue Date:

2018-10-02

Research Org.:

Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1490732

Patent Number(s):

10087547

Application Number:

15/354,063

Assignee:

The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B1/02 - by thermal treatment, e.g. strain annealing
C30B1/023 - {from solids with amorphous structure}
C30B1/10 - by solid state reactions or multi-phase diffusion
C30B25/02 - Epitaxial-layer growth
C30B25/04 - Pattern deposit, e.g. by using masks
C30B29/40 - AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
C30B29/403 - {AIII-nitrides}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02422 - {Non-crystalline insulating materials, e.g. glass, polymers}
H01L21/02428 - {Structure}
H01L21/02488 - {Insulating materials}
H01L21/02494 - {Structure}
H01L21/02505 - {consisting of more than two layers}
H01L21/02538 - {Group 13/15 materials}
H01L21/02543 - {Phosphides}

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DOE Contract Number:  

AC02-05CH11231

Resource Type:

Patent

Resource Relation:

Patent File Date: 2016 Nov 17

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE