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Title: Method of lift-off patterning thin films in situ employing phase change resists

Patent ·
OSTI ID:1159897
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Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.

Research Organization:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
SC00G1088
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
Patent Number(s):
8,841,152
Application Number:
13/465,065
OSTI ID:
1159897
Country of Publication:
United States
Language:
English

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Cited By (1)

Method of lift-off patterning thin films in situ employing phase change resists patent September 2014

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36 MATERIALS SCIENCE