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Title: Generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate

Abstract

A device employing the generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate (e.g., GaAs, GaSb, InAs, or InGaAs). The device includes two SiO2/ZnO islands, each including a SiO2 buffer layer deposited on the doped p-type III-V semiconductor substrate and a ZnO layer deposited on the SiO2 buffer layer. An input interdigital transducers (IDT) and an output IDT are each patterned on one of the SiO2/ZnO islands. The IDTs generates surface acoustic waves along an exposed surface of the highly doped p-type III-V semiconductor substrate. The surface acoustic waves improve the photoelectric and photovoltaic properties of the device. The device is manufactured using a disclosed technique for propagating strong surface acoustic waves on weak piezoelectric materials. Also disclosed is a photodetector developed using that technique.

Inventors:
;
Issue Date:
Research Org.:
George Washington Univ., Washington, DC (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1860219
Patent Number(s):
11211913
Application Number:
16/929,234
Assignee:
The George Washington University (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03H - IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
DOE Contract Number:  
SC0017831
Resource Type:
Patent
Resource Relation:
Patent File Date: 07/15/2020
Country of Publication:
United States
Language:
English

Citation Formats

Dong, Boqun, and Zaghloul, Mona. Generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate. United States: N. p., 2021. Web.
Dong, Boqun, & Zaghloul, Mona. Generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate. United States.
Dong, Boqun, and Zaghloul, Mona. Tue . "Generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate". United States. https://www.osti.gov/servlets/purl/1860219.
@article{osti_1860219,
title = {Generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate},
author = {Dong, Boqun and Zaghloul, Mona},
abstractNote = {A device employing the generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate (e.g., GaAs, GaSb, InAs, or InGaAs). The device includes two SiO2/ZnO islands, each including a SiO2 buffer layer deposited on the doped p-type III-V semiconductor substrate and a ZnO layer deposited on the SiO2 buffer layer. An input interdigital transducers (IDT) and an output IDT are each patterned on one of the SiO2/ZnO islands. The IDTs generates surface acoustic waves along an exposed surface of the highly doped p-type III-V semiconductor substrate. The surface acoustic waves improve the photoelectric and photovoltaic properties of the device. The device is manufactured using a disclosed technique for propagating strong surface acoustic waves on weak piezoelectric materials. Also disclosed is a photodetector developed using that technique.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {12}
}

Works referenced in this record:

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