Generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate
Abstract
A device employing the generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate (e.g., GaAs, GaSb, InAs, or InGaAs). The device includes two SiO2/ZnO islands, each including a SiO2 buffer layer deposited on the doped p-type III-V semiconductor substrate and a ZnO layer deposited on the SiO2 buffer layer. An input interdigital transducers (IDT) and an output IDT are each patterned on one of the SiO2/ZnO islands. The IDTs generates surface acoustic waves along an exposed surface of the highly doped p-type III-V semiconductor substrate. The surface acoustic waves improve the photoelectric and photovoltaic properties of the device. The device is manufactured using a disclosed technique for propagating strong surface acoustic waves on weak piezoelectric materials. Also disclosed is a photodetector developed using that technique.
- Inventors:
- Issue Date:
- Research Org.:
- George Washington Univ., Washington, DC (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1860219
- Patent Number(s):
- 11211913
- Application Number:
- 16/929,234
- Assignee:
- The George Washington University (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03H - IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
- DOE Contract Number:
- SC0017831
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 07/15/2020
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Dong, Boqun, and Zaghloul, Mona. Generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate. United States: N. p., 2021.
Web.
Dong, Boqun, & Zaghloul, Mona. Generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate. United States.
Dong, Boqun, and Zaghloul, Mona. Tue .
"Generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate". United States. https://www.osti.gov/servlets/purl/1860219.
@article{osti_1860219,
title = {Generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate},
author = {Dong, Boqun and Zaghloul, Mona},
abstractNote = {A device employing the generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate (e.g., GaAs, GaSb, InAs, or InGaAs). The device includes two SiO2/ZnO islands, each including a SiO2 buffer layer deposited on the doped p-type III-V semiconductor substrate and a ZnO layer deposited on the SiO2 buffer layer. An input interdigital transducers (IDT) and an output IDT are each patterned on one of the SiO2/ZnO islands. The IDTs generates surface acoustic waves along an exposed surface of the highly doped p-type III-V semiconductor substrate. The surface acoustic waves improve the photoelectric and photovoltaic properties of the device. The device is manufactured using a disclosed technique for propagating strong surface acoustic waves on weak piezoelectric materials. Also disclosed is a photodetector developed using that technique.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 28 00:00:00 EST 2021},
month = {Tue Dec 28 00:00:00 EST 2021}
}
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