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Title: Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

Abstract

Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

Inventors:
 [1]
  1. 10328 Pinehurst Ave., Omaha, NE 68124
Issue Date:
Research Org.:
Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)
OSTI Identifier:
873105
Patent Number(s):
6091128
Assignee:
Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG47-93R701314
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
semiconductor; systems; utilizing; materials; form; rectifying; junctions; p-type; doping; regions; metallurgically; field; induced; methods; disclosed; integrated; circuits; schotky; barrier; diffused; junction; technology; incorporate; material; schottky; based; inverting; non-inverting; gate; voltage; channel; single; devices; operating; characteristics; similar; multiple; device; cmos; operated; modulators; p-channel; mosfets; formed; therefrom; controlled; rectification; direction; switching; block; parasitic; current; flow; pathways; simple; demonstrative; five; mask; fabrication; procedures; semiconductor single; formed therefrom; parasitic current; multiple device; single device; switching devices; characteristics similar; operating characteristics; schottky barrier; flow path; integrated circuits; integrated circuit; current flow; gate voltage; single devices; voltage controlled; switching device; semiconductor systems; voltage control; systems utilizing; rectifying junctions; rectifying junction; field induced; fabrication procedures; p-channel mosfets; mask fabrication; doping regions; fabrication procedure; operating characteristic; /257/

Citation Formats

Welch, James D. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use. United States: N. p., 2000. Web.
Welch, James D. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use. United States.
Welch, James D. Sat . "Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use". United States. https://www.osti.gov/servlets/purl/873105.
@article{osti_873105,
title = {Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use},
author = {Welch, James D},
abstractNote = {Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

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Works referenced in this record:

Etched Schottky-barrier m.o.s.f.e.t.s using a single mask
journal, January 1971


Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer
journal, December 1976


Metallurgical and electrical properties of chromium silicon interfaces
journal, January 1980


Compound formation between amorphous silicon and chromium
journal, December 1980


SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain
journal, January 1968