Title: Methods for enhancing P-type doping in III-V semiconductor films

Abstract

Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

Inventors:

Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

Issue Date:

2017-08-01

Research Org.:

University of Utah Research Foundation, Salt Lake City, UT (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1373713

Patent Number(s):

9721810

Application Number:

13/322,403

Assignee:

University of Utah Research Foundation

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02579 - {P-type}
H01L21/02543 - {Phosphides}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S117/913 - Graphoepitaxy or surface modification to enhance epitaxy

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02581 - {Transition metal or rare earth elements}
H01L21/02538 - {Group 13/15 materials}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}

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DOE Contract Number:  

FG02-04ER46148

Resource Type:

Patent

Resource Relation:

Patent File Date: 2011 Oct 28

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE