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Title: Methods for enhancing P-type doping in III-V semiconductor films

Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.
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University of Utah Research Foundation CHO
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Resource Relation:
Patent File Date: 2011 Oct 28
Research Org:
University of Utah Research Foundation, Salt Lake City, UT (United States)
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Country of Publication:
United States

Works referenced in this record:

Dual-Surfactant Effect to Enhance p -Type Doping in III-V Semiconductor Thin Films
journal, November 2008

Effects of surfactants Sb and Bi on the incorporation of zinc and carbon in III/V materials grown by organometallic vapor-phase epitaxy
journal, August 2006
  • Howard, A. D.; Chapman, D. C.; Stringfellow, G. B.
  • Journal of Applied Physics, Vol. 100, Issue 4, Article No. 044904
  • DOI: 10.1063/1.2227707

Zn enhancement during surfactant-mediated growth of GaInP and GaP
journal, January 2006

Enhanced cation-substituted p-type doping in GaP from dual surfactant effects
journal, January 2010

Surfactants in epitaxial growth
journal, August 1989
  • Copel, M.; Reuter, M. C.; Kaxiras, Efthimios
  • Physical Review Letters, Vol. 63, Issue 6, p. 632-635
  • DOI: 10.1103/PhysRevLett.63.632

Layer-by-layer growth of Ag on Ag(111) induced by enhanced nucleation: A model study for surfactant-mediated growth
journal, August 1993
  • Rosenfeld, Georg; Servaty, Roland; Teichert, Christian
  • Physical Review Letters, Vol. 71, Issue 6, p. 895-898
  • DOI: 10.1103/PhysRevLett.71.895

Importance of the additional step-edge barrier in determining film morphology during epitaxial growth
journal, May 1995
  • Meyer, J. A.; Vrijmoeth, J.; van der Vegt, H. A.
  • Physical Review B, Vol. 51, Issue 20, p. 14790-14793
  • DOI: 10.1103/PhysRevB.51.14790

The use of a surfactant (Sb) to induce triple period ordering in GaInP
journal, March 2000
  • Fetzer, C. M.; Lee, R. T.; Shurtleff, J. K.
  • Applied Physics Letters, Vol. 76, Issue 11, p. 1440-1442
  • DOI: 10.1063/1.126057

Sb and Bi surfactant effects on homo-epitaxy of GaAs on (001) patterned substrates
journal, May 2004

Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy
journal, May 2001
  • Shurtleff, J. K.; Jun, S. W.; Stringfellow, G. B.
  • Applied Physics Letters, Vol. 78, Issue 20, p. 3038-3040
  • DOI: 10.1063/1.1371790

Generalized Electron Counting in Determination of Metal-Induced Reconstruction of Compound Semiconductor Surfaces
journal, September 2006

X-ray standing-wave study of an Sb-terminated GaAs(001)-(2×4) surface
journal, July 1995
  • Sugiyama, Munehiro; Maeyama, Satoshi; Maeda, Fumihiko
  • Physical Review B, Vol. 52, Issue 4, p. 2678-2681
  • DOI: 10.1103/PhysRevB.52.2678

Spectroscopy of hydrogen‐related complexes in GaP:Zn
journal, October 1994
  • McCluskey, M. D.; Haller, E. E.; Walker, J.
  • Applied Physics Letters, Vol. 65, Issue 17, p. 2191-2192
  • DOI: 10.1063/1.112758