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Title: Methods for enhancing P-type doping in III-V semiconductor films

Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1373713
Assignee:
University of Utah Research Foundation CHO
Patent Number(s):
9,721,810
Application Number:
13/322,403
Contract Number:
FG02-04ER46148
Resource Relation:
Patent File Date: 2011 Oct 28
Research Org:
University of Utah Research Foundation, Salt Lake City, UT (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

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