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Title: Methods for enhancing P-type doping in III-V semiconductor films

Abstract

Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

Inventors:
; ;
Issue Date:
Research Org.:
University of Utah Research Foundation, Salt Lake City, UT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1373713
Patent Number(s):
9721810
Application Number:
13/322,403
Assignee:
University of Utah Research Foundation
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
FG02-04ER46148
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Oct 28
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Liu, Feng, Stringfellow, Gerald, and Zhu, Junyi. Methods for enhancing P-type doping in III-V semiconductor films. United States: N. p., 2017. Web.
Liu, Feng, Stringfellow, Gerald, & Zhu, Junyi. Methods for enhancing P-type doping in III-V semiconductor films. United States.
Liu, Feng, Stringfellow, Gerald, and Zhu, Junyi. Tue . "Methods for enhancing P-type doping in III-V semiconductor films". United States. https://www.osti.gov/servlets/purl/1373713.
@article{osti_1373713,
title = {Methods for enhancing P-type doping in III-V semiconductor films},
author = {Liu, Feng and Stringfellow, Gerald and Zhu, Junyi},
abstractNote = {Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {8}
}

Works referenced in this record:

Semiconductor optical device and method of manufacturing the same
patent, September 2003


Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
patent, October 2006


Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys
patent, April 2013


GaN epitaxy with migration enhancement and surface energy modification
patent, September 2013


Use of surfactants to control unintentional dopant in semiconductors
patent-application, January 2007


Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
patent-application, March 2007


Surfactant Assisted Growth in Barrier Layers In Inverted Metamorphic Multijunction Solar Cells
patent-application, March 2009


Dual-Surfactant Effect to Enhance p -Type Doping in III-V Semiconductor Thin Films
journal, November 2008


Effects of surfactants Sb and Bi on the incorporation of zinc and carbon in III/V materials grown by organometallic vapor-phase epitaxy
journal, August 2006


Zn enhancement during surfactant-mediated growth of GaInP and GaP
journal, January 2006


Enhanced cation-substituted p-type doping in GaP from dual surfactant effects
journal, January 2010


Surfactants in epitaxial growth
journal, August 1989


Layer-by-layer growth of Ag on Ag(111) induced by enhanced nucleation: A model study for surfactant-mediated growth
journal, August 1993


Importance of the additional step-edge barrier in determining film morphology during epitaxial growth
journal, May 1995


The use of a surfactant (Sb) to induce triple period ordering in GaInP
journal, March 2000


Sb and Bi surfactant effects on homo-epitaxy of GaAs on (001) patterned substrates
journal, May 2004


Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy
journal, May 2001


Generalized Electron Counting in Determination of Metal-Induced Reconstruction of Compound Semiconductor Surfaces
journal, September 2006


X-ray standing-wave study of an Sb-terminated GaAs(001)-(2×4) surface
journal, July 1995


Spectroscopy of hydrogen‐related complexes in GaP:Zn
journal, October 1994