Methods for enhancing P-type doping in III-V semiconductor films
Abstract
Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.
- Inventors:
- Issue Date:
- Research Org.:
- University of Utah Research Foundation, Salt Lake City, UT (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1373713
- Patent Number(s):
- 9721810
- Application Number:
- 13/322,403
- Assignee:
- University of Utah Research Foundation
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- FG02-04ER46148
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Oct 28
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Liu, Feng, Stringfellow, Gerald, and Zhu, Junyi. Methods for enhancing P-type doping in III-V semiconductor films. United States: N. p., 2017.
Web.
Liu, Feng, Stringfellow, Gerald, & Zhu, Junyi. Methods for enhancing P-type doping in III-V semiconductor films. United States.
Liu, Feng, Stringfellow, Gerald, and Zhu, Junyi. Tue .
"Methods for enhancing P-type doping in III-V semiconductor films". United States. https://www.osti.gov/servlets/purl/1373713.
@article{osti_1373713,
title = {Methods for enhancing P-type doping in III-V semiconductor films},
author = {Liu, Feng and Stringfellow, Gerald and Zhu, Junyi},
abstractNote = {Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {8}
}
Works referenced in this record:
Smooth epitaxial compound films having a uniform thickness by vapor depositing on the (100) crystallographic plane of the substrate
patent, August 1964
- Williams, Forrest
- US Patent Document 3,146,137
Process for production of III-V compound epitaxial crystals
patent, August 1976
- Ruehrwein, Robert A.
- US Patent Document 3,975,218
Method for Achieving Improved Epitaxy Quality (Surface Texture and Defect Density) on Free-Standing (Aluminum, Indium, Gallium) Nitride ((Al,In,Ga)N) Substrates for Opto-Electronic and Electronic Devices
patent, September 2002
- Flynn, Jeffrey S.; Brandes, George R.; Vaudo, Robert P.
- US Patent Document 6,447,604
Semiconductor optical device and method of manufacturing the same
patent, September 2003
- Ikoma, Nobuyuki; Ishida, Akira; Takagishi, Shigenori
- US Patent Document 6,625,187
Atomic hydrogen as a surfactant in production of highly strained InGaAs, InGaAsN, InGaAsNSb, and/or GaAsNSb quantum wells
patent, February 2005
- Johnson, Ralph H.
- US Patent Document 6,858,519
Quantum dot tunable external cavity laser (QD-TEC laser)
patent, March 2005
- Fafard, Simon
- US Patent Document 6,862,312
Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
patent, October 2006
- Fetzer, Christopher M.; Ermer, James H.; King, Richard R.
- US Patent Document 7,122,734
Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material
patent, April 2013
- Hersee, Stephen D.; Wang, Xin; Sun, Xinyu
- US Patent Document 8,410,496
Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys
patent, April 2013
- Huffaker, Diana L.; Dawson, Larry R.; Balakrishnan, Ganesh
- US Patent Document 8,410,523
GaN epitaxy with migration enhancement and surface energy modification
patent, September 2013
- Kraus, Philip Allan; Borisov, Boris; Chua, Thai Cheng
- US Patent Document 8,524,581
Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
patent-application, September 2003
- Flynn, Jeffrey; Brandes, George
- US Patent Application 10/107001; 20030178633
Use of surfactants to control unintentional dopant in semiconductors
patent-application, January 2007
- Stringfellow, Gerald; Howard, Alexander; Chapman, David
- US Patent Application 11/428940; 20070006801
Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
patent-application, March 2007
- Fetzer, Christopher; Ermer, James; King, Richard
- US Patent Application 11/517156; 20070068572
Surfactant Assisted Growth in Barrier Layers In Inverted Metamorphic Multijunction Solar Cells
patent-application, March 2009
- Stan, Mark; Cornfeld, Arthur; Newman, Fred
- US Patent Application 12/102550; 20090078311
Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material
patent-application, July 2009
- Hersee, Stephen; Wang, Xin; Sun, Xinyu
- US Patent Application 12/399273; 20090169828
Dual-Surfactant Effect to Enhance -Type Doping in III-V Semiconductor Thin Films
journal, November 2008
- Zhu, J. Y.; Liu, Feng; Stringfellow, G. B.
- Physical Review Letters, Vol. 101, Issue 19, Article No. 196103
Effects of surfactants Sb and Bi on the incorporation of zinc and carbon in III/V materials grown by organometallic vapor-phase epitaxy
journal, August 2006
- Howard, A. D.; Chapman, D. C.; Stringfellow, G. B.
- Journal of Applied Physics, Vol. 100, Issue 4, Article No. 044904
Zn enhancement during surfactant-mediated growth of GaInP and GaP
journal, January 2006
- Chapman, D. C.; Howard, A. D.; Stringfellow, G. B.
- Journal of Crystal Growth, Vol. 287, Issue 2, p. 647-651
Enhanced cation-substituted p-type doping in GaP from dual surfactant effects
journal, January 2010
- Zhu, Junyi; Liu, Feng; Stringfellow, G. B.
- Journal of Crystal Growth, Vol. 312, Issue 2, p. 174-179
Surfactants in epitaxial growth
journal, August 1989
- Copel, M.; Reuter, M. C.; Kaxiras, Efthimios
- Physical Review Letters, Vol. 63, Issue 6, p. 632-635
Layer-by-layer growth of Ag on Ag(111) induced by enhanced nucleation: A model study for surfactant-mediated growth
journal, August 1993
- Rosenfeld, Georg; Servaty, Roland; Teichert, Christian
- Physical Review Letters, Vol. 71, Issue 6, p. 895-898
Importance of the additional step-edge barrier in determining film morphology during epitaxial growth
journal, May 1995
- Meyer, J. A.; Vrijmoeth, J.; van der Vegt, H. A.
- Physical Review B, Vol. 51, Issue 20, p. 14790-14793
The use of a surfactant (Sb) to induce triple period ordering in GaInP
journal, March 2000
- Fetzer, C. M.; Lee, R. T.; Shurtleff, J. K.
- Applied Physics Letters, Vol. 76, Issue 11, p. 1440-1442
Sb and Bi surfactant effects on homo-epitaxy of GaAs on (001) patterned substrates
journal, May 2004
- Wixom, R. R.; Rieth, L. W.; Stringfellow, G. B.
- Journal of Crystal Growth, Vol. 265, Issue 3-4, p. 367-374
Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy
journal, May 2001
- Shurtleff, J. K.; Jun, S. W.; Stringfellow, G. B.
- Applied Physics Letters, Vol. 78, Issue 20, p. 3038-3040
Generalized Electron Counting in Determination of Metal-Induced Reconstruction of Compound Semiconductor Surfaces
journal, September 2006
- Zhang, Lixin; Wang, E. G.; Xue, Q. K.
- Physical Review Letters, Vol. 97, Issue 12, Article No. 126103
X-ray standing-wave study of an Sb-terminated GaAs(001)-(2×4) surface
journal, July 1995
- Sugiyama, Munehiro; Maeyama, Satoshi; Maeda, Fumihiko
- Physical Review B, Vol. 52, Issue 4, p. 2678-2681
Spectroscopy of hydrogen‐related complexes in GaP:Zn
journal, October 1994
- McCluskey, M. D.; Haller, E. E.; Walker, J.
- Applied Physics Letters, Vol. 65, Issue 17, p. 2191-2192