Bi-Se doped with Cu, p-type semiconductor

Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

Title: Bi-Se doped with Cu, p-type semiconductor

Abstract

A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

Inventors:: Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

Issue Date:: 2013-08-20

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1093242

Patent Number(s):: 8513050

Application Number:: 12/815,585

Assignee:: U.S. Department of Energy (Washington, DC)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0328 - including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
H01L31/072 - the potential barriers being only of the PN heterojunction type

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L29/861 - Diodes
H01L21/02579 - {P-type}
H01L29/24 - including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
H01L21/02631 - {Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation}
H01L21/02628 - {using solutions}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}

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DOE Contract Number:: AC36-98GO10337

Resource Type:: Patent

Resource Relation:: Patent File Date: 2010 Jun 15

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Bhattacharya, Raghu Nath, Phok, Sovannary, and Parilla, Philip Anthony. Bi-Se doped with Cu, p-type semiconductor.  United States: N. p., 2013. 
        Web.

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                    Bhattacharya, Raghu Nath, Phok, Sovannary, & Parilla, Philip Anthony. Bi-Se doped with Cu, p-type semiconductor.  United States.

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                    Bhattacharya, Raghu Nath, Phok, Sovannary, and Parilla, Philip Anthony. Tue .  
        "Bi-Se doped with Cu, p-type semiconductor".  United States.  https://www.osti.gov/servlets/purl/1093242.

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@article{osti_1093242,

  title        = {Bi-Se doped with Cu, p-type semiconductor},

  author       = {Bhattacharya, Raghu Nath and Phok, Sovannary and Parilla, Philip Anthony},

  abstractNote = {A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2013},

  month        = {8}

}

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Works referenced in this record:

The Cu-Bi-Se phase system at temperatures between 300 and 750C [The Cu-Bi-Se phase system at temperatures between 300 and 750C]
journal, December 2003

Karup-Møller, S.
Neues Jahrbuch für Mineralogie - Monatshefte, Vol. 2003, Issue 12
https://doi.org/10.1127/0028-3649/2003/2003-0556

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Title: Bi-Se doped with Cu, p-type semiconductor

Abstract

Citation Formats

The Cu-Bi-Se phase system at temperatures between 300 and 750C [The Cu-Bi-Se phase system at temperatures between 300 and 750C] journal, December 2003

The Cu-Bi-Se phase system at temperatures between 300 and 750C [The Cu-Bi-Se phase system at temperatures between 300 and 750C]
journal, December 2003