Bi-Se doped with Cu, p-type semiconductor

Title: Bi-Se doped with Cu, p-type semiconductor

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Abstract

A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

Inventors:: Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

Issue Date:: 2013-08-20

Research Org.:: U.S. Department of Energy (Washington, DC)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1093242

Patent Number(s):: 8,513,050

Application Number:: 12/815,585

Assignee:: U.S. Department of Energy (Washington, DC)

DOE Contract Number:: AC36-98G010337

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Bhattacharya, Raghu Nath, Phok, Sovannary, and Parilla, Philip Anthony. Bi-Se doped with Cu, p-type semiconductor.  United States: N. p., 2013. 
        Web.

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                    Bhattacharya, Raghu Nath, Phok, Sovannary, & Parilla, Philip Anthony. Bi-Se doped with Cu, p-type semiconductor.  United States.

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                    Bhattacharya, Raghu Nath, Phok, Sovannary, and Parilla, Philip Anthony. Tue .  
        "Bi-Se doped with Cu, p-type semiconductor".  United States.  https://www.osti.gov/servlets/purl/1093242.

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@article{osti_1093242,

  title        = {Bi-Se doped with Cu, p-type semiconductor},

  author       = {Bhattacharya, Raghu Nath and Phok, Sovannary and Parilla, Philip Anthony},

  abstractNote = {A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2013},

  month        = {8}

}

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