Bi-Se doped with Cu, p-type semiconductor
Abstract
A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1093242
- Patent Number(s):
- 8513050
- Application Number:
- 12/815,585
- Assignee:
- U.S. Department of Energy (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-98GO10337
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2010 Jun 15
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Bhattacharya, Raghu Nath, Phok, Sovannary, and Parilla, Philip Anthony. Bi-Se doped with Cu, p-type semiconductor. United States: N. p., 2013.
Web.
Bhattacharya, Raghu Nath, Phok, Sovannary, & Parilla, Philip Anthony. Bi-Se doped with Cu, p-type semiconductor. United States.
Bhattacharya, Raghu Nath, Phok, Sovannary, and Parilla, Philip Anthony. Tue .
"Bi-Se doped with Cu, p-type semiconductor". United States. https://www.osti.gov/servlets/purl/1093242.
@article{osti_1093242,
title = {Bi-Se doped with Cu, p-type semiconductor},
author = {Bhattacharya, Raghu Nath and Phok, Sovannary and Parilla, Philip Anthony},
abstractNote = {A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {8}
}
Works referenced in this record:
The Cu-Bi-Se phase system at temperatures between 300 and 750C [The Cu-Bi-Se phase system at temperatures between 300 and 750C]
journal, December 2003
- Karup-Møller, S.
- Neues Jahrbuch für Mineralogie - Monatshefte, Vol. 2003, Issue 12