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Title: Method of lift-off patterning thin films in situ employing phase change resists

Abstract

Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.

Inventors:
; ;
Issue Date:
Research Org.:
Massachusetts Institute of Technology, Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1159897
Patent Number(s):
8,841,152
Application Number:
13/465,065
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
DOE Contract Number:  
SC00G1088
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Bahlke, Matthias Erhard, Baldo, Marc A, and Mendoza, Hiroshi Antonio. Method of lift-off patterning thin films in situ employing phase change resists. United States: N. p., 2014. Web.
Bahlke, Matthias Erhard, Baldo, Marc A, & Mendoza, Hiroshi Antonio. Method of lift-off patterning thin films in situ employing phase change resists. United States.
Bahlke, Matthias Erhard, Baldo, Marc A, and Mendoza, Hiroshi Antonio. Tue . "Method of lift-off patterning thin films in situ employing phase change resists". United States. https://www.osti.gov/servlets/purl/1159897.
@article{osti_1159897,
title = {Method of lift-off patterning thin films in situ employing phase change resists},
author = {Bahlke, Matthias Erhard and Baldo, Marc A and Mendoza, Hiroshi Antonio},
abstractNote = {Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {9}
}

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