Method of lift-off patterning thin films in situ employing phase change resists
Abstract
Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.
- Inventors:
- Issue Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1159897
- Patent Number(s):
- 8841152
- Application Number:
- 13/465,065
- Assignee:
- Massachusetts Institute of Technology (Cambridge, MA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- SC00G1088
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Bahlke, Matthias Erhard, Baldo, Marc A, and Mendoza, Hiroshi Antonio. Method of lift-off patterning thin films in situ employing phase change resists. United States: N. p., 2014.
Web.
Bahlke, Matthias Erhard, Baldo, Marc A, & Mendoza, Hiroshi Antonio. Method of lift-off patterning thin films in situ employing phase change resists. United States.
Bahlke, Matthias Erhard, Baldo, Marc A, and Mendoza, Hiroshi Antonio. Tue .
"Method of lift-off patterning thin films in situ employing phase change resists". United States. https://www.osti.gov/servlets/purl/1159897.
@article{osti_1159897,
title = {Method of lift-off patterning thin films in situ employing phase change resists},
author = {Bahlke, Matthias Erhard and Baldo, Marc A and Mendoza, Hiroshi Antonio},
abstractNote = {Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {9}
}
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