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Title: Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys

Abstract

Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.

Inventors:
 [1];  [2]
  1. Evergreen, CO
  2. Lakewood, CO
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
909584
Patent Number(s):
7229498
Application Number:
10/532,540
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Norman, Andrew G, and Olson, Jerry M. Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys. United States: N. p., 2007. Web.
Norman, Andrew G, & Olson, Jerry M. Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys. United States.
Norman, Andrew G, and Olson, Jerry M. Tue . "Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys". United States. https://www.osti.gov/servlets/purl/909584.
@article{osti_909584,
title = {Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys},
author = {Norman, Andrew G and Olson, Jerry M},
abstractNote = {Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {6}
}

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Works referenced in this record:

Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties
journal, March 2001


Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
journal, May 2000


Optical properties of InAs quantum dots in a Si matrix
journal, March 1999