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Title: High voltage semiconductor devices and methods of making the devices

Metal-oxide-semiconductor field-effect transistor (MOSFET) devices are described which have a p-type region between the p-type well regions of the device. The p-type region can be either floating or connected to the p-type well regions by additional p-type regions. MOSFET devices are also described which have one or more p-type regions connecting the p-type well regions of the device. The p-type well regions can be arranged in a various geometric arrangements including square, diamond and hexagonal. Methods of making the devices are also described.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1471407
Assignee:
Monolith Semiconductor Inc. (Round Rock, TX) ARPA-E
Patent Number(s):
10,062,749
Application Number:
14/303,019
Contract Number:
AR0000442
Resource Relation:
Patent File Date: 2014 Jun 12
Research Org:
Monolith Semiconductor Inc., Round Rock, TX (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

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