Title: High voltage semiconductor devices and methods of making the devices

Abstract

Metal-oxide-semiconductor field-effect transistor (MOSFET) devices are described which have a p-type region between the p-type well regions of the device. The p-type region can be either floating or connected to the p-type well regions by additional p-type regions. MOSFET devices are also described which have one or more p-type regions connecting the p-type well regions of the device. The p-type well regions can be arranged in a various geometric arrangements including square, diamond and hexagonal. Methods of making the devices are also described.

Inventors:

Chatty, Kiran; Matocha, Kevin; Banerjee, Sujit; Rowland, Larry Burton

Issue Date:

Tue Aug 28 00:00:00 EDT 2018

Research Org.:

Monolith Semiconductor Inc., Round Rock, TX (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1471407

Patent Number(s):

10062749

Application Number:

14/303,019

Assignee:

Monolith Semiconductor Inc. (Round Rock, TX)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/0619 - {with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction}
H01L29/0623 - {Buried supplementary region, e.g. buried guard ring
H01L29/0696 - {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}
H01L29/0878 - {Impurity concentration or distribution}
H01L29/1095 - {Body region, i.e. base region, of DMOS transistors or IGBTs
H01L29/42368 - {the thickness being non-uniform}
H01L29/42376 - {characterised by the length or the sectional shape}
H01L29/66712 - {Vertical DMOS transistors, i.e. VDMOS transistors}
H01L29/66719 - {With a step of forming an insulating sidewall spacer}
H01L29/7802 - {Vertical DMOS transistors, i.e. VDMOS transistors}
H01L29/7813 - {with trench gate electrode, e.g. UMOS transistors

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DOE Contract Number:  

AR0000442

Resource Type:

Patent

Resource Relation:

Patent File Date: 2014 Jun 12

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE