High voltage semiconductor devices and methods of making the devices

Title: High voltage semiconductor devices and methods of making the devices

Abstract

A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.

Inventors:: Matocha, Kevin; Chatty, Kiran; Banerjee, Sujit

Issue Date:: 2019-05-14

Research Org.:: Monolith Semiconductor Inc., Round Rock, TX (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1568341

Patent Number(s):: 10,290,732

Application Number:: 15/844,766

Assignee:: Monolith Semiconductor Inc. (Round Rock, TX)

DOE Contract Number:: AR0000442

Resource Type:: Patent

Resource Relation:: Patent File Date: 12/18/2017

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats


                    Matocha, Kevin, Chatty, Kiran, and Banerjee, Sujit. High voltage semiconductor devices and methods of making the devices.  United States: N. p., 2019. 
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                    Matocha, Kevin, Chatty, Kiran, & Banerjee, Sujit. High voltage semiconductor devices and methods of making the devices.  United States.

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                    Matocha, Kevin, Chatty, Kiran, and Banerjee, Sujit. Tue .  
        "High voltage semiconductor devices and methods of making the devices".  United States.  https://www.osti.gov/servlets/purl/1568341.

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@article{osti_1568341,

  title        = {High voltage semiconductor devices and methods of making the devices},

  author       = {Matocha, Kevin and Chatty, Kiran and Banerjee, Sujit},

  abstractNote = {A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {5}

}

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