Title: High voltage semiconductor devices and methods of making the devices

Abstract

A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.

Inventors:

Matocha, Kevin; Chatty, Kiran; Banerjee, Sujit

Issue Date:

2019-05-14

Research Org.:

Monolith Semiconductor Inc., Round Rock, TX (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1568341

Patent Number(s):

10290732

Application Number:

15/844,766

Assignee:

Monolith Semiconductor Inc. (Round Rock, TX)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L27/0629 - {in combination with diodes, or resistors, or capacitors}
H01L21/823412 - {with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials}
H01L21/0485 - {Ohmic electrodes}
H01L29/7806 - {the other device being a Schottky barrier diode}
H01L29/872 - Schottky diodes
H01L27/0727 - {in combination with diodes, or capacitors or resistors}
H01L29/0696 - {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}
H01L21/0495 - {Schottky electrodes}
H01L29/0619 - {with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction}
H01L29/1608 - {Silicon carbide}
H01L21/046 - {using ion implantation}
H01L29/66068 - {the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices}
H01L29/1095 - {Body region, i.e. base region, of DMOS transistors or IGBTs
H01L21/8213 - {the substrate being a semiconductor, using SiC technology

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DOE Contract Number:  

AR0000442

Resource Type:

Patent

Resource Relation:

Patent File Date: 12/18/2017

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 42 ENGINEERING