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Title: High voltage MOSFET devices and methods of making the devices

Abstract

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

Inventors:
; ;
Issue Date:
Research Org.:
MONOLITH SEMICONDUCTOR INC., Round Rock, TX (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1229728
Patent Number(s):
9214572
Application Number:
14/456,110
Assignee:
MONOLITH SEMICONDUCTOR INC.
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AR0000442
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Aug 11
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Banerjee, Sujit, Matocha, Kevin, and Chatty, Kiran. High voltage MOSFET devices and methods of making the devices. United States: N. p., 2015. Web.
Banerjee, Sujit, Matocha, Kevin, & Chatty, Kiran. High voltage MOSFET devices and methods of making the devices. United States.
Banerjee, Sujit, Matocha, Kevin, and Chatty, Kiran. Tue . "High voltage MOSFET devices and methods of making the devices". United States. https://www.osti.gov/servlets/purl/1229728.
@article{osti_1229728,
title = {High voltage MOSFET devices and methods of making the devices},
author = {Banerjee, Sujit and Matocha, Kevin and Chatty, Kiran},
abstractNote = {A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {12}
}

Works referenced in this record:

Silicon-carbide MOSFET cell structure and method for forming same
patent, February 2013


DMOSFET and planar type MOSFET
patent-application, March 2007


Silicon Carbide Vertical Mosfet Design For Fast Switching Applications
patent-application, January 2008


Semiconductor Device
patent-application, August 2010


Horizontally Depleted Metal Semiconductor Field Effect Transistor
patent-application, December 2010


Semiconductor Device and Method for Manufacturing Same
patent-application, January 2012


Semiconductor Device
patent-application, September 2012


Power Semiconductor Device and Methods For Fabricating The Same
patent-application, October 2012


Semiconductor Device
patent-application, January 2013


Silicon-Carbide Mosfet Cell Structure And Method For Forming Same
patent-application, May 2013


Semiconductor Device and Method of Manufacturing the Same
patent-application, July 2014


    Works referencing / citing this record:

    High voltage MOSFET devices and methods of making the devices
    patent, December 2015