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Title: Method of making high breakdown voltage semiconductor device

Abstract

A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.

Inventors:
 [1];  [2]
  1. (Scotia, NY)
  2. (Jonesville, NY)
Issue Date:
OSTI Identifier:
867396
Patent Number(s):
4927772
Assignee:
General Electric Company (Schenectady, NY) OSTI
DOE Contract Number:  
AC07-84NV10418
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; breakdown; voltage; semiconductor; device; p-n; junction; multiple-zone; termination; extension; jte; region; uniformly; merges; reverse; blocking; disclosed; graded; multiple; zones; concentration; dopant; adjacent; facilitate; merging; placing; near; field; preferably; substantially; overlaps; novel; fabrication; provided; eliminates; prior; step; separately; diffusing; device fabrication; fabrication method; p-n junction; breakdown voltage; semiconductor device; multiple zones; novel device; multiple zone; substantially overlap; junction region; /438/

Citation Formats

Arthur, Stephen D., and Temple, Victor A. K. Method of making high breakdown voltage semiconductor device. United States: N. p., 1990. Web.
Arthur, Stephen D., & Temple, Victor A. K. Method of making high breakdown voltage semiconductor device. United States.
Arthur, Stephen D., and Temple, Victor A. K. Mon . "Method of making high breakdown voltage semiconductor device". United States. https://www.osti.gov/servlets/purl/867396.
@article{osti_867396,
title = {Method of making high breakdown voltage semiconductor device},
author = {Arthur, Stephen D. and Temple, Victor A. K.},
abstractNote = {A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}

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