High voltage semiconductor devices and methods of making the devices
Abstract
A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.
- Inventors:
- Issue Date:
- Research Org.:
- Monolith Semiconductor Inc., Round Rock, TX (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1417850
- Patent Number(s):
- 9876104
- Application Number:
- 15/412,462
- Assignee:
- Monolith Semiconductor Inc. (Round Rock, TX)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AR0000442
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2017 Jan 23
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Matocha, Kevin, Chatty, Kiran, and Banerjee, Sujit. High voltage semiconductor devices and methods of making the devices. United States: N. p., 2018.
Web.
Matocha, Kevin, Chatty, Kiran, & Banerjee, Sujit. High voltage semiconductor devices and methods of making the devices. United States.
Matocha, Kevin, Chatty, Kiran, and Banerjee, Sujit. Tue .
"High voltage semiconductor devices and methods of making the devices". United States. https://www.osti.gov/servlets/purl/1417850.
@article{osti_1417850,
title = {High voltage semiconductor devices and methods of making the devices},
author = {Matocha, Kevin and Chatty, Kiran and Banerjee, Sujit},
abstractNote = {A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {1}
}
Works referenced in this record:
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Influence of Anode Layout on the Performance of SiC JBS Diodes
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- Radhakrishnan, Rahul; Zhao, Jian Hui
- Materials Science Forum, Vol. 717-720, p. 937-940