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Title: High voltage semiconductor devices and methods of making the devices

A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.
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Issue Date:
OSTI Identifier:
Monolith Semiconductor Inc. (Round Rock, TX) ARPA-E
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2017 Jan 23
Research Org:
Monolith Semiconductor Inc., Round Rock, TX (United States)
Sponsoring Org:
Country of Publication:
United States

Other works cited in this record:

Improvement of the electrical safe operating area of a DMOS transistor during ESD events
conference, April 2009
  • Podgaynaya, Alevtina; Pogany, Dionyz; Gornik, Erich
  • Reliability Physics Symposium, 2009 IEEE International
  • DOI: 10.1109/IRPS.2009.5173293

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